EIA: Studies of III-V Lattice-Mismatched Heterojunction Devices

采用分子束外延和MOCVD方法在InP和GaAs衬底上生长晶格失配的GaInAs和A InAs薄膜。不同密度的失配位错将被有意引入。用X射线摇摆曲线技术和摇摆曲线形貌技术对试件进行无损表征，并进行清洗和解理。将形成金属薄膜欧姆接触或肖特基接触，并将研究I-V或C-V特性。预期的结果是(L)三元外延层-衬底结的肖特基势垒高度作为失配位错密度的函数，(2)失配位错对p-i-n和n-n+-n异质结电学特性的影响，(3)作为失配的函数的三元外延层的临界厚度，以及(4)非破坏性X射线技术在测量失配位错中的评估。这一拟议的项目有望改善目前对失配位错对器件性能影响的理解，并提供关于金属-三元和三元-衬底接触肖特基势垒高度的进一步和准确的数据。

Lattice-mismatched GaInAs and A InAs layers will be grown on InP and GaAs substrates by MBE and MOCVD. Different-density misfit dislocations will be intentionally introduced. Samples will be nondestructively characterized by the x-ray rocking curve technique and the rocking curve topography technique, and cleaned and cleaved. Thin metal film Ohmic or Schottky contacts will be formed and I-V or C-V characteristics will be studied. Expected results are (l) Schottky barrier heights for the ternary epilayer-substrate junction as a function of the misfit dislocation density, (2) effects of the misfit dislocations in the electrical characteristics for p-i-n and n-n+-n heterostructures, (3) the critical thickness of the ternary epilayer as a function of the misfit, and (4) assessment of the nondestructive x-ray technique in measurements of the misfit dislocations. This proposed project is expected to improve the present understanding of the effects of the misfit dislocations in device performance and provide further and accurate data on the Schottky barrier heights for metal-ternary and ternary-substrate contacts.