ROW: Structural Studies of Semiconductor Heterostructures using Transmission Electron Microscope

该研究启动奖是在国家科学基金女性研究机会计划下颁发的。本研究的目的是研究分子束外延生长的IV-VI族半导体异质结和超晶格的结构。重点是将这些材料的结构与它们的物理性能和潜在的器件性能联系起来。微观结构、晶体结构和缺陷结构将用透射电子显微镜和计算机辅助图像模拟来表征。首先将对碲化铅-碲化硒Eu的超晶格和异质结构进行研究，但随着研究的进展，还将研究其他的IV-VI化学体系。这些缺陷将与超晶格和异质结构的电、磁和光学性质有关。

This Research Initiation Award is made under the National Science Foundation Research Opportunities for Women Program. The objective of the investigation is to study the structure of Group IV-VI semiconductor heterostructures and superlattices grown by molecular beam epitaxy. The emphasis is to relate the structure of these materials to their physical properties and potential device performance. The microstructure, crystallographic structure, and defect structure will be characterized using transmission electron microscopy and computer-assisted image simulation. The initial studies will be made on lead telluride- lead europium selenium telluride superlattices and heterostructures, but other IV-VI chemical systems will be investigated as the research progresses. The defects will be related to the electronic, magnetic and optical properties of the superlattices and heterostructures.