Engineering Creativity Award: Point Defect Characterization in GaAs Using Positron Annihilation Lifetime Spectroscopy

用正电子湮没寿命谱方法对砷化镓晶格进行了研究。研究了砷化镓中的点缺陷。在对这些缺陷进行识别之后，可以根据热处理和制造技术来跟踪这些缺陷的存在。这种类型的数据可以帮助确定形成每个缺陷的方法。这个项目是工科学生创造力奖的资助项目。

The research involves a study of gallium arsenide lattice by methods of positron annihilation lifetime spectroscopy. The study deals with the point defects in gallium arsenide. After the identification of these defects has been made, the presence of these defects can be followed as a function of thermal treatment as well as manufacturing techniques. Data of this type can help determine the method by which each defect is formed. This project is one supported under the Creativity Awards for Engineering Students.