RUI: Resonant Raman Scattering as a Tool for Studying Point Defects in III-V Semiconductors (Materials Research)

他们计划进行一系列实验，利用拉曼散射来提供有关III-V半导体缺陷的微观信息。几个实验涉及到共振拉曼散射（RRS）。这有两个主要的好处：1)拉曼信号强度的增强，从而提高了该技术对降低缺陷浓度的灵敏度；2)RRS允许在与缺陷相关的特定电子能级和观察到的局部振动模式之间建立连接。这项工作很重要，因为它将从基础和应用的角度来研究当前非常重要的问题（例如，砷化镓和砷化镓铝中与DX中心相关的共振供体态的研究）。这项工作也将有助于发展和扩展RRS技术用于研究半导体缺陷。他们还计划利用拉曼散射来研究点缺陷对镓和铝在砷化镓/铝砷化镓界面上相互扩散的影响。这是一项重要的工作，不仅因为它有望揭示一般相互扩散过程的物理学，而且因为在这个界面上的相互扩散对于制造载流子被限制在一维以上的量子阱器件具有重要的实际意义。

They plan on conducting a series of experiments that use Raman scattering to provide microscopic information concerning defects in III-V semiconductors. Several of the experiments involve using resonant Raman scattering (RRS). This has two main benefits: 1) There will be an enhancement of the Raman signal strength thus increasing the sensitivity of the technique to lower defect concentrations and 2) RRS allows a connection to be made between specific electronic levels associated with defects and the observed local vibrational modes. This work is important because it will look at problems that are currently of great importance from both a fundamental and an applications point of view (e.g. investigation of the resonant donor state associated with the DX center in gallium arsenide and aluminum gallium arsenide.) The proposed work will also help develop and extend the technique of RRS for studying defects in semiconductors. They also plan to use Raman scattering to study the influence of point defect on the interdiffusion of gallium and aluminum across the gallium arsenide/aluminum gallium arsenide interface. This is work that is important both because of the light it promises to shed on the physics of the interdiffusion process in general and because interdiffusion at this interface is of great practical importance for making quantum well devices in which the carriers are confined in more than one dimension.