Research Initiation: Mapping Process Chemistry for Silicon PECVD

在平行板内绘制物种浓度， 等离子体增强化学气相沉积反应器 从氦/氢化硅等离子体沉积硅。 还将测量薄膜性能。 其目的是 检查过程变量、气体 浓度，以及非晶/结晶转变，以及 还确定可以允许反应器建模的动力学。 PECVD是一种重要的新兴薄膜制造技术 微电子制造，但仅限于经验 产品质量、再现性和新膜的设置 发展 气相（等离子体相）化学占主导地位， 如果动力学对于PECVD是定量可预测的， 工艺，那么现有的和新的PECVD工艺可以 提高 如上所述的空间分辨数据是 这是实现这一目标的重要前提。

Species concentrations are mapped within a parallel-plate, plasma-enhanced chemical vapor deposition (PECVD) reactor during the deposition of silicon from a helium/silicon hydride plasma. Film properties will also be measured. The purposes are to examine the relationship among process variables, gas concentrations, and the amorphous/crystalline transition, and also to determine kinetics that could permit reactor modeling. PECVD is an important emerging technology for creating thin films for microelectronics manufacturing, but is limited to empirical settings for product quality, reproducibility, and new-film development. Gas-phase (plasma-phase) chemistry dominates, and if the kinetics were quantitatively predictable for PECVD processes, then existing and new PECVD processes could be improved. Spatially resolved data such as described above are critical prerequisites for achieving such a goal.