Unsymmetrical Tellurides as Novel Metallic-Organic Chemical Vapor Deposition (MOCVD) Reagents for Tellurium Alloys

本项目属于材料化学的一般领域和有机金属化学的子领域。这项实验活动的主旨是合成和表征新分子，作为金属有机化学气相沉积（MOCVD）技术制造金属薄膜器件的更有效的前体。不对称碲化物（RTeR）代表了目前使用的非最佳源试剂的一种新选择。通过适当选择R和R′基团，这些不对称的碲化物将增加挥发性，同时保持不稳定的碲碳键。本相活动的技术方法是通过对文献程序的修改，合成并表征一系列RTeR'式的五种化合物。这五种化合物将被热解并鉴定其产物。研究了碳基自由基和碲基自由基对分解速率和生长温度的相对作用。低生长温度对于碲化汞镉的突变异质结器件的MOCVD是必不可少的。第一阶段的成功将导致碲合金MOCVD的新型低温源试剂的鉴定。在成功完成第一阶段的研究后，这些试剂的效用将在随后的第二阶段的努力中用于制造碲化汞镉薄膜。

This project is in the general area of materials chemistry and in the subfield of organometallic chemistry. The thrust of this experimental activity is the synthesis and characterization of new molecules as more efficient precursors for the fabrication of thin metal film devices by metalorganic chemical vapor deposition (MOCVD) technology. Unsymmetrical tellurides (RTeR') represent a novel alternative to the non-optimal source reagents currently in use. These unsymmetrical tellurides will have increased volatility while maintaining labile tellurium-carbon bonds by appropriate choice of the R and R' groups. The technical approach in this Phase activity is the synthesis and characterization of a series of five compounds of formula RTeR' by modifications of literature procedures. These five compounds will be pyrolized and the products identified. The relative role of carbon-based vs. tellurium-based radicals on the decomposition rate and growth temperature will be studied. Low growth temperatures are essential for the MOCVD of abrupt heterojunction devices fabricated from mercury cadmium telluride. Success in Phase I will result in the identification of new, low temperature source reagents for the MOCVD of tellurium alloys. Upon successful completion of this Phase I research, the utility of these reagents will be demonstrated in the fabrication of mercury cadmium telluride films in a subsequent Phase II effort.