Dynamic Studies of Reactions at Semiconductor Interfaces

这项研究的目的是研究半导体材料中的互扩散和界面反应，特别是金属-半导体界面。正在进行中的重点是对与此类反应相关的原子行为的新见解，包括结晶、颗粒生长和位错行为。主要的分析技术是动态、原位高分辨率电子显微镜，X射线衍射、俄歇电子能谱、卢瑟福背散射将提供补充信息。这项研究集中于彻底了解金属与半导体的反应，以及从界面形成的一开始，随着反应的进行而在半导体内发生的反应。

The goal of the investigation is to study the interdiffusion and interface reactions in semiconductor materials, particularly metal-semiconductor interfaces. The emphasis in ongoing new insight into the atomic behavior associated with such reactions to include crystallization, grain growth, and dislocation behavior. The primary analytical technique is dynamic, in-situ high resolution electron microscopy, and x-ray diffraction, Auger electron spectroscopy, Rutherford backscattering will provide complementary information. The research concentrates upon both the thorough understanding of the reactions of metals with semiconductors as well as the reactions within the semiconductors as the reaction progresses from the very beginning of the formation of the interface.