Unsymmetrical Tellurides as Novel Metalorganic Chemical Vapor Deposition Reagents for Tellurium Alloys

小企业创新研究（SBIR）第二阶段项目 在材料化学的一般领域和子领域 金属有机化学气相沉积（MOCVD）。 这个目标 活动是开发挥发性MOCVD试剂，用于 碲合金薄膜的制备。 镉汞 碲化物（MCT）作为一种材料具有重要的潜在应用 被动红外探测器 MCT的MOCVD需要 碲元素新源试剂的研制 增加挥发性和降低生长温度。 在NSF资助ISI-8860518的第一阶段研究期间， 一种新的化合物，三氟甲基（烷基）碲， 通过新的配体交换反应合成。 这些化合物 显示具有显著更高的波动性， 与最佳试剂的分解温度相当 目前可用。 在该II期研究中，这些化合物的大规模合成 它们将被用作Te源试剂， CdTe薄膜的生长。 物理和电气特性 电影将被确定。 同时，进一步的工作 将做阐明的热解机制， 三氟甲基（烷基）碲化物及其配体作用机理 交换反应 这些信息，结合电影 生长研究，应允许确定最佳来源 并开发了规模大、纯度高的试剂 化合物合成。

This Small Business Innovation Research (SBIR) Phase II project is in the general area of materials chemistry and in the subfield metalorganic chemical vapor deposition (MOCVD). The goal of this activity is the development of volatile MOCVD reagents for use in the fabrication of tellurium alloy thin films. Mercury cadmium telluride (MCT) has important potential applications as a material for passive infrared detectors. MOCVD of MCT necessitates development of new tellurium element source reagents with increased volatility and lower growth temperatures. During the tenure of Phase I research under NSF grant ISI-8860518, a new class of compounds, trifluoromethyl(alkyl)tellurides, was synthesized via a novel ligand exchange reaction. These compounds were shown to have a significantly higher volatility and comparable decomposition temperatures to the best reagents currently available. In this Phase II study, large scale syntheses of these compounds will be developed and they will be used as Te source reagents for the growth of CdTe films. The physical and electrical properties of the films will be determined. Simultaneously, further work will be done to elucidate the pyrolysis mechanisms of the trifluoromethyl(alkyl)tellurides and the mechanism of the ligand exchange reaction. This information, combined with the film growth studies, should allow determination of the optimum source reagent and the development of a large scale, high purity synthesis of that compound.