Engineering Research Equipment Grant: Laser-Ablation and Crystal Growth and Characterization of Quantum

将建立一个多靶装置，用于半导体、磁性半导体、磁性金属薄膜和高T_c超导体的外延生长。我们研究的具体内容是：(1)通过顺序分层原子单层来评估新的半导体结构的生长。这可能会成为一种全新的化学类型。技术上重要的材料，如InGaAs2和GaA13As4，不会有与合金有关的问题，如载流子散射和能级正在拓宽。(2)有序磁性II-VI半导体的生长研究。预期对Cd3MnTe4的磁化率有较大的增强，这似乎是磁性可调谐激光器和法拉第旋转器等设备所必需的。(3)对激光烧蚀II-VI半导体的P掺杂和N掺杂技术进行了评价。P-n结对CdTe和可能的ZnSe来说才刚刚开始变得可行。(4)覆盖磁性金属薄膜可获得更高密度的磁记录。(5)高温超导体的外延生长和薄膜分层。原位沉积绝缘层可以改善隧道结。

A multiple target apparatus will be built for epitaxial growth of semiconductors, magnetic semiconductors, magnetic metal films, and high Tc superconductors. Specific elements of our investigation are: (1) Evaluate the growth of new semiconductor structures by sequentially layering atomic monolayers. This could become a totally new type of chemistry. Technologically important materials such as InGaAs2 and GaA13As4 would not have alloy- related problems like carrier scattering and energy level broadening. (2) Growth studies of ordered magnetic II-VI semiconductors. Large enhancements of the magnetic susceptibility are expected for Cd3MnTe4, which appear to be necessary for devices like magnetically-tunable lasers and Faraday rotators. (3) Evaluate the laser-ablation technique for p- and n-doping of II-VI semiconductors. p-n junctions are just beginning to become feasible for CdTe and possible ZnSe. (4) Overlaying thin films of magnetic metals may lead to higher density magnetic recording. (5) Epitaxial growth and thin film layering of high-Tc superconductors. In situ deposition of insulating barriers could lead to improve tunnel junctions.