Invesitgations of periodic quantum wave guide structures

本研究的目的是设计、制造和表征高共振电子波导结构。半导体结构将采用高迁移率的GaAs/AlGaAs异质结。器件设计将类似于HEMT器件，除了栅极结构将确认源极和漏极之间的二维电子气到一维空间。限制区域将以类似于将调谐短桩和空腔添加到传统的波导系统的方式来整形。我们将研究器件的传输系数和跨导作为栅极偏置、源漏偏置、温度和外加磁场。

The objective of this research is to design, fabricate and characterize highly resonant electron wave guide structures. The semiconductor structures will be fabricated using high mobility GaAs/A1GaAs heterostructures. Device design will be similar to that of HEMT devices except a gate structure will confirm the two-dimensional electron gas between the source and the drain to one-dimension. The region of confinement will be shaped in a manner analogous to adding tuning stubs and cavities to a conventional wave guide system. We will examine the transmission coefficients and transconductance of the device as a function of gate bias, source-drain bias, temperature and applied magnetic field.