Mechanics of Shaped Crystal Growth from the Melt

该项目涉及的生成和增殖 位错在生长过程中的立方，圆柱形晶体的 硅、砷化镓和磷化铟， 从熔体中通过直拉法或液体包封- 直拉法 重点放在 高温热应力计算 变形 三个主要的影响将被研究：1）的形状 熔体和晶体之间的固液界面， 控制可以大大减少所产生的热应力，2） 与晶体方向有关的晶体各向异性 增长，其适当的选择可能会减少由此产生的错位 对于给定量的晶体各向异性的密度，以及 3)位错的产生和增殖 处理位错的温度非弹性本构关系 密度作为一个内部变量，并允许其微观结构 进化 新的定性和定量认识 对单晶体生长很重要的基本过程， 半导体预计从这个项目;结果也 与微电子工业有技术相关性。

This project addresses the generation and multiplication of dislocations during the growth of cubic, cylindrical crystals of Silicon, Gallium Arsenide, and Indium Phosphide which are pulled from the melt by the Czochralski or the liquid-encapsulated- Czochralski method. Emphasis in on the computation of thermal stresses during high temperature deformation. Three major effects will be studied: 1)the shape of the solid-liquid interface between the melt and crystal, whose control may greatly reduce the resulting thermal stresses, 2)the crystalline anisotropy in relation to the direction of crystal growth, whose proper choice may minimize the resulting dislocation density for a given amount of crystalline anisotropy, and 3)dislocation generation and multiplication by using high temperature inelastic constitutive laws which treat the dislocation density as an internal variable and allow for its microstructural evolution. New qualitative and quantitative understanding of fundamental processes important to bulk single crystal growth in semiconductors is anticipated from this project; the results also have technological relevance to the microelectronics industry.