New Cu(I) Precursors for CVD of Copper: An Investigation of the Gas Phase and Surface Chemistry

该合作奖是在材料化学和化学加工倡议下制定的，由化学和材料研究部门提供支持。将制备一系列新的铜(I)化合物，并根据蒸汽压、沉积速率、镀层纯度、形貌和电阻率等标准对其进行CVD评价。沉积高纯度铜膜的前驱体将成为表面研究的主题，以探索沉积机制。这些研究将集中在通过反应散射和热解吸质谱、俄歇电子能谱和x射线光电子能谱来理解CVD的基本机理方面。这些技术将用于识别反应产物，研究吸附模式，结合能和被吸附物质的氧化态，并检查吸附/解吸动力学，膜均匀性和杂质水平。沉积铜的新方法引起了电子工业的极大兴趣。了解铜配体的表面化学性质将有助于设计新的分子前体，从而降低分解温度和提高膜的纯度。

This collaborative award, made under the Materials Chemistry and Chemical Processing Initiative, is supported by the Divisions of Chemistry and Materials Research. A series of new copper(I) compounds will be prepared and evaluated for CVD based on criteria such as vapor pressure, deposition rate, deposit purity, morphology and resistivity. Precursors which deposit high-purity copper films will be the subject of surface studies to probe deposition mechanisms. These studies will focus on understanding the fundamental mechanistic aspects of CVD by means of Reactive Scattering and Thermal Desorption Mass Spectrometry, Auger Electron Spectroscopy and X-ray Photoelectron Spectroscopy. These techniques will be used to identify reaction products, to study modes of adsorption, binding energies and oxidation states of adsorbed species, and to examine adsorption/desorption kinetics, film homogeneity and impurity levels. %%% New methods of copper deposition are of great interest to the electronics industry. Understanding the surface chemistry as a function of the nature of the copper ligands will aid in the design of new molecular precursors that result in lower decomposition temperatures and higher purity films.