Copper and Silver Chemical Vapor Deposition: An Investigation of the Surface Chemistry

铜和银化学气相沉积：表面化学研究

• 批准号: 9407089
• 负责人: Mark Hampden-Smith
• 金额: $ 39.6万
• 依托单位: University of New Mexico
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 1994
• 资助国家: 美国
• 起止时间: 1994-07-15 至 1998-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9407089&HistoricalAwards=false
• 关键词: Copper; Silver; Chemical; Vapor; Deposition

9407089 This renewal award is made in the Advanced Materials and Processing Program in support of the research of Professors Mark Hampden-Smith and Toivo Kodas. Support is provided by the Divisions of Chemistry, Materials Research, and Chemical and Transport Systems. Two fundamental problems in metal chemical vapor deposition (CVD) will be addressed: (1) methods of providing reproducible delivery for precursors with low volatility, and (2) developing methods to control selective metal deposition. Low volatility silver(I) precursors will be prepared and their CVD studied using a aerosol delivery system which will allow studies of reaction kinetics in partial pressure ranges that cannot be achieved with conventional thermal delivery systems. Studies of surface chemistry will be aimed at understanding how copper(I) precursor molecules react with surface functional groups on silica, alumina, titania, and silicon and aluminum nitride surfaces. These interactions will be characterized by FTIR, XPS and temperature-programmed desorption-MS. Surfaces will be modified to control the selective deposition of copper and silver metals. This research is relevant to semiconductor technology. Copper will likely replace aluminum as an interconnect for high resolution chips. This research will provide the fundamental background for electromigration-resistant metal deposition.

9407089 该更新奖是在先进材料和加工计划中颁发的，以支持Mark Hampden-Smith教授和Toivo Kodas教授的研究。 支持由化学，材料研究，化学和运输系统的部门提供。金属化学气相沉积（CVD）中的两个基本问题将得到解决：（1）提供具有低挥发性的前体的可再现输送的方法，以及（2）开发控制选择性金属沉积的方法。将制备低挥发性银（I）前体，并使用气溶胶输送系统研究其CVD，该气溶胶输送系统将允许在分压范围内研究反应动力学，而这用常规热输送系统无法实现。表面化学的研究将旨在了解铜（I）前体分子如何与二氧化硅，氧化铝，二氧化钛，硅和氮化铝表面上的表面官能团反应。这些相互作用将通过FTIR、XPS和程序升温脱附-MS表征。将对表面进行改性以控制铜和银金属的选择性沉积。 这项研究与半导体技术有关。铜可能会取代铝作为高分辨率芯片的互连。该研究为抗电迁移金属沉积提供了基础性的背景。