In-Situ Synthesis of Ferroelectric and Superconductor Thin Films on Semiconductors

本研究的目的是在有缓冲层和没有缓冲层的半导体衬底上制备具有特定微结构的铁电薄膜和超导薄膜，并深入了解铁电薄膜和超导薄膜的结构-性能关系。这将通过控制和系统地改变半导体上的铁电薄膜和半导体上的外延缓冲层的微观结构来实现。为了便于微观结构的定制，将沉积缓冲层，缓冲层作为扩散屏障，并在薄膜和衬底之间提供良好的热匹配。这种方法也将用于在半导体衬底上沉积无裂纹超导薄膜和相关的超晶格结构。%%%%这项研究将提供量身定制的铁电薄膜加工，以获得所需的电性能。半导体上的铁电薄膜是非易失性存储器等重要的电子器件。该研究还将有助于在半导体衬底上制造无裂纹外延超导薄膜和相关结构。本研究旨在深入了解这些薄膜的结构-性质关系。

This proposed research aims at fabricating tailored microstructure ferroelectric and superconducting thin films on semiconductors substrates with and without buffer layers, and developing a thorough understanding of the structure-property correlations in ferroelectric and superconducting films. This will be achieved by controlled and systematic variation in the microstructure of the ferroelectric films on semiconductors and on epitaxial buffer layers on semiconductors. To facilitate the tailoring of the microstructure, buffer layers will be deposited which act as diffusion barriers and provide good thermal matching between the film and the substrate. This approach will be also used to deposit crack-free superconducting thin films and related superlattice structures on semiconductor substrates. %%%% This research will provide tailored processing of ferroelectric films to obtain the desired electrical properties. Ferroelectric thin films on semiconductors are important electronic devices such as non-volatile memories. This research will also lead to the fabrication of crack-free epitaxial superconducting films and related structures on semiconductor substrates. This study aims to develop a thorough understanding of the structure-property relationships in these films.