Investigation of Non-Equilibrium Epitaxial Growth of Electronic Materials

这个基础研究项目利用了热原子束散射（ABS）的独特能力——对低覆盖杂质和缺陷的高灵敏度，实时测量——来获得复杂表面有序相的详细结构信息，而没有表面损伤或充电效应，从而可以研究外延的动力学、动力学和结构特性。该研究将ABS技术与其他先进的表面科学诊断方法相结合，一层一层地表征外延晶体的生长方式、结构和化学细节。这项研究有望在原子水平上对外延晶体生长提供更深入的基本理解。从应用的角度来看，在这个层面上理解晶体生长的细节对先进半导体器件的设计和制造特别有帮助。研究结果对大规模、高速集成电路技术具有普遍意义。

This basic research project utilizes the capabilities unique to thermal atomic beam scattering(ABS)--high sensitivity to low coverage impurities and defects, real time measurement--to obtain detailed structural information for complex surface ordered phases without surface damage or charging effects allowing the study of kinetic, dynamical and structural properties of epitaxy. The research combines the ABS technique with other advanced surface science diagnostic methods to characterize both the growth mode, and the structural and chemical details of epitaxial crystal growth, layer by layer. %%% This research is expected to provide deeper fundamental understanding of epitaxial crystal growth at the atomic level. From an application point of view, understanding the details of crystal growth at this level is particularly helpful to advanced semiconductor device design and fabrication. The results will be of importance in a general way to the technology of large scale, high speed integrated electronic circuits.