Excitation Transfer in Luminescence of Semiconductors

激发能在局域态之间的直接转移 将研究半导体中的隧穿（跳跃）。 这 这一过程在过去常常被忽视。 的研究 转让的程度和机制， 供体-受体对（DAP）对于充分理解 发光现象。 适当的材料参数， 发光过程将重新评估使用的样品， 具有可忽略的转移或校正因子已知的情况下。 这项工作将集中在锌硒，其中有大量的 样品可用。 该研究将包括一个详细的 时间衰减、光谱和强度演化的检验 作为激发强度和波长，温度， 和杂质浓度。

The direct transfer of excitation energy among localized states via tunneling (hopping) in semiconductors is to be investigated. This process has often been neglected in the past. A study of the extent and of the mechanisms governing this transfer related to donor-acceptor pairs (DAPs) are necessary for a full understanding of luminescence phenomena. The proper material parameters for the luminescence processes will be re-evaluated using samples which have negligible transfer or where the correction factors are known. The work will center on Zinc-Selenium, for which a large number of samples are available. The study will include a detailed examination of time decay, and of spectral and intensity evolution as a function of excitation intensity and wavelength, temperature, and impurity concentration.