Boron Nitrogen Isostere-Doped Organometallics for Molecular Electronics

通过单链碳原子链连接两种或两种以上金属的挑战吸引了密集的研究，从而在分子水平上模拟电子电路。BN-等位元化合物包括选择性地用元素B和N取代(掺杂)碳原子。这些史无前例的材料应该效仿并可能超过全碳系统的性能。本项目旨在设计和合成第一个分子BN-异构性碳线材料，包括基于金属-碳多重成键的例子。除了它们的孤立之外，预期的结果包括对它们与即将出现的技术相关的电气和光学特性的结构功能行为进行高级别的讯问。

The challenge of connecting two or more metals by a single chain of carbon atoms attracts intense study, thereby mimicking electronic circuitry at the molecular level. BN-Isosteric compounds involve selectively replacing (doping) carbon atoms with the elements boron (B) and nitrogen (N). These unprecedented materials should emulate and likely exceed the properties of all-carbon systems. This project aims to design and synthesise the first molecular BN-isosteric carbon-wire materials including examples based on metal-carbon multiple bonding. Expected outcomes beyond their isolation include high-level interrogation of the structure-function behaviour of their electrical and optical properties relevant to the technologies that will emerge.