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Development of an Undergraduate High Speed Microelectronics Testing Laboratory at Florida A&M University.

Development of an Undergraduate High Speed Microelectronics Testing Laboratory at Florida A&M University.
佛罗里达州本科生高速微电子测试实验室的开发
批准号:
9152378
负责人:
Simon Foo
金额:
$2.73万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1991
资助国家:
美国
项目状态:
已结题
起止时间:
1991-07-15 至 1993-06-30

项目摘要

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中文摘要
翻译
该项目为FAMU/FSU工程学院电气工程专业本科生建立了一个超高速集成电路(VHSIC)测试实验室。本实验室通过一系列涵盖功能测试和参数测试基本原理的实验,为高年级学生提供实用的VHSIC测试方法。该实验室是本科微电子专业的补充,包括固态器件、数字和模拟集成电路设计以及超大规模集成电路的计算机辅助设计。利用新设备,学生们研究了属于逻辑家族的高速微电子器件的开关特性,如发射体耦合逻辑(ECL)、高速互补金属氧化物半导体(HCMOS)和砷化镓(GaAs)金属半导体场效应晶体管(MESFET)。电气工程专业的学生完成一系列的实验室实验,可以全面了解高速集成电路
英文摘要
This project establishs a very-high-speed integrated circuit (VHSIC) testing laboratory for undergraduate electrical engineering students at the FAMU/FSU College of Engineering. This laboratory provides practical testing methodologies of VHSIC for senior-level students through a series of experiments which cover the fundamentals of functional and parametric testing. The laboratory supplements the undergraduate Microelectronics Program which includes courses in solid-state devices, digital and analog IC design, and the computer aided- design (CAD) of very large scale integration (VLSI) circuits. With the new equipment, the students study the switching characteristics of high-speed microelectronic devices belonging to logic families such as emitter-coupled logic (ECL), high- speed complementary-metal-oxide-semiconductor (HCMOS), and gallium arsenide (GaAs) metal-semiconductor field-effect transistors (MESFET). Electrical engineering majors completing the sequence of laboratory experiments gain a comprehensive knowledge of high-speed IC
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RIA: Dynamics of Oscillatory Neural Systems
  • 批准号:
    9309469
  • 项目类别:
    Standard Grant
  • 资助金额:
    $14.62万
  • 财政年份:
    1993
  • 负责人:
    Simon Foo
  • 依托单位:
海外基金