Presidential Young Investigator Award
Presidential Young Investigator Award
批准号:
9157011
负责人:
Alain Kaloyeros
金额:
$31.25万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1991
资助国家:
美国
项目状态:
已结题
起止时间:
1991-07-01 至 1996-06-30
中文摘要
该项目由总统青年研究员奖资助,将专注于开发可制造的低温化学气相沉积工艺,以生长用于先进微电子设备和电路的设备质量金属和化合物半导体。由首席调查员担保时,来自行业的配套资金。将用于通过直接项目支持和通过大学和工业研究人员之间的深入互动来加强研究工作。预计整个项目的努力将有助于提高电信、计算和信息处理部件的性能和降低成本的科学和技术基础。
英文摘要
This project is funded by a Presidential Young Investigator award, and will focus on the development of manufacturable low temperature chemical vapor deposition processes for the growth of device quality metals and compound semiconductors for use in advanced microelectronics devices and circuitry. Matching funds from industry, when secured by the principal investigator. will be used to enhance the research efforts by direct project support and through in-depth interactions between university and industrial researchers. The overall project effort is expected to contribute to the scientific and technology base for improved performance and reduced cost of components for telecommunications, computing and information processing.
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会议论文
Research Initiation Award: Cooper For Microelectronics Applications By Low-Temperature MOCVD (LTMOCVD) Processes
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批准号:9010661
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项目类别:Standard Grant
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资助金额:$7.0万
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财政年份:1990
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负责人:Alain Kaloyeros
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依托单位:
海外基金