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A Unique and New Plasma Assisted Deposition Technique Utilizing In-Situ Renucleation

A Unique and New Plasma Assisted Deposition Technique Utilizing In-Situ Renucleation
利用原位再核的独特的新型等离子体辅助沉积技术
批准号:
9161393
负责人:
James Withers
金额:
$5.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1992
资助国家:
美国
项目状态:
已结题
起止时间:
1992-01-01 至 1992-09-30

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中文摘要
翻译
为了优化机械性能,生产具有工程组织和性能的有用产品的新技术创造了对材料加工和制造的永无止境的需求。等离子体辅助化学气相沉积(PACVD)是一种能够显著提高沉积速率的材料加工新技术。沉积表面的“加工”可以导致持续的再成核,以产生非常细粒的沉积、缺陷和无应力,几乎对任何厚度都是光滑的,并具有显著改善的机械性能。该计划将开发一种高瓦特密度的等离子体化学气相沉积(CVD)工艺,并结合沉积表面的连续原位“加工”,在机械性能大大高于传统材料的非常细晶的无应力沉积中实现极高的沉积速率。这一过程将以难以制造的耐火材料为例进行演示。
英文摘要
New technologies for producing useful products with engineered microstructure and properties for optimized mechanical performance creates an insatiable demand for materials processing and manufacturing. Plasma assisted chemical vapor deposition (PACVD) is a new technique for materials processing that has the capability to substantially enhance deposition rates. "Working" of a deposition surface can cause continued renucleation to produce a very fine grained deposit, defect and stress free that is smooth to virtually any thickness with substantially improved mechanical properties. The program will develop a high watt density plasma chemical vapor deposition (CVD) process coupled with continual in- situ "working" of the deposition surface to achieve extraordinarily high deposition rates in a very fine grained stress free deposits with mechanical properties substantially greater than conventional materials. The process will be demonstrated with difficult to fabricate refractory materials.
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