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Conference: Travel Support for New MRS Symposium on Photo- Induced Space-Charge Effects in Semiconductors to be held inSan Francisco, CA, April 27 - May 1, 1992

Conference: Travel Support for New MRS Symposium on Photo- Induced Space-Charge Effects in Semiconductors to be held inSan Francisco, CA, April 27 - May 1, 1992
会议:为将于 1992 年 4 月 27 日至 5 月 1 日在加利福尼亚州旧金山举行的关于半导体光致空间电荷效应的新 MRS 研讨会提供差旅支持
批准号:
9200143
负责人:
David Nolte
金额:
$0.36万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1992
资助国家:
美国
项目状态:
已结题
起止时间:
1992-05-15 至 1993-04-30

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中文摘要
翻译
正在安排一个新的研讨会, 1992年4月27日至5月1日, 材料研究春季会议 协会将在旧金山弗朗西斯科举行。 的 专题讨论会的题目是:光诱导 半导体中的空间电荷效应: 光电导、光谱和 电子光学。 旅行和登记 学生和博士后基金 要求参加这次研讨会。 在提交的摘要中,至少有两个 来自学生和博士后的 提升到受邀会谈的地位。 这两个人的行程和登记 发言人要求。 此外,本发明还提供了一种方法, 部分支持4个额外的 学生或博士后被要求在 为了确保优秀的演讲者 能够参加谁不会 否则就有资源。 的 研讨会的技术内容 围绕光折变效应的中心 及其在半导体中的应用 结构. 光折变效应是一个空间- 充电现象 它分为 光生载流子的产生, 电阻率样品,然后是 光电导输运和俘获 对缺陷的收费。 的 光生空间电荷场改变 样品的光学性质 通过电光效应。 的 光折变效应是最重要的 有吸引力的光学非线性, 全光控制和 图像处理,因为它需要非常 低光强度。 这种低光 需求是一个直接后果 缺陷上空间电荷的存储, 允许低的光强度 随着时间的推移而整合。 应用 包括相位共轭、光学 放大和空间光调制器。 光折变材料的研究进展 效果是利用电光 量子限制结构的性质 诺尔特,1990年! 照片的作用- 感生空间电荷 光折变量子威尔斯是紧密 类似于发生在 自电光器件
英文摘要
A new symposium is being arranged to take place April 27 - May 1, 1992 at the Spring Meeting of the Materials Research Society to be held in San Francisco. The title of the symposium is: Photo-Induced Space Charge Effects in Semiconductors: Photoconductivity, Spectroscopy and Electro-Optics. Travel and registration funds for students and post-doctoral attendees for this symposium is requested. Of the submitted abstracts, at least two from students and post-docs will be elevated to the status of invited talks. Travel and registrations for these two speakers are requested. In addition, funds for partial support for 4 additional students or post-docs are requested in order to ensure that good speakers will be able to attend who would not otherwise have the resources. The technical content of the symposium centers around the photorefractive effect and application to semiconductor structures. The photorefractive effect is a space- charge phenomena. It operates through the generation of photocarriers in a high- resistivity sample, followed by photoconductive transport and trapping of the charge at defects. The photogenerated space-charge fields alter the optical properties of the sample through the electro-optic effect. The photorefractive effect is one of the most attractive optical nonlinearity for applications of all-optical control and image processing because it requires very low light intensities. This low-light requirement is a direct consequence of the storage of space-charge on defects, allowing low light intensities to be integrated over time. Applications include phase conjugation, optical amplification and spatial light modulators. Recent advances in the photorefractive effect are using the electro-optic properties of quantum-confined structures ıNolte, 1990!. The role of the photo- induced space-charge in these photorefractive quantum wells is closely analogous to the feedback that occurs in self electro-optic devices.
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