Conventional and Coherent Quantum 1/f Effects in Solid State Electronic Devices and Microstructures

1/f噪声出现在大多数高技术中， 应用作为低频波动限制 可实现的性能和稳定性。 上 另一方面，物理横截面和过程 作者从理论上证明了 以1/f谱密度波动， 一个普适公式， 分数横截面涨落的影响 精细结构常数a=1/137，如果 散射载流子的速度变化， 他们的数量是已知的。 我们现在可以计算 各种散射形式的量子1/f噪声 （杂质，声子，umklapp，谷间），散装 以及表面复合和隧穿率，如 以及排放过程。 对于扩展电流 在每个单元具有超过1013个载波的较大设备中 长度的磁能占主导地位的动能 漂移运动的能量，所以相干量子1/f 效果成为主导。 拟议研究 将这一理论应用于固态设备， 微观结构，并将进一步发展 过渡区理论 传统和连贯的领域。 我们预计 拟议的研究有利于高科技应用 通过通用和实用的低1/f噪声设计 和优化原则，并提高 量子1/f效应的一般理解为 量子混沌，或者作为一种重要的技术， 自然的基本法则。

1/f noise appears in most high-technology applications as a low-frequency fluctuation limiting the achievable performance and stability. On the other hand, physical cross sections and process rates have been shown theoretically by the author to fluctuate with a 1/f spectral density according to a universal formula which gives the power spectrum of fractional cross section fluctuations in terms of the fine structure constant a=1/137 if both the velocity change of the scattered current carriers and their number are known. We can now calculate quantum 1/f noise in all forms of scattering (impurity, phonon, umklapp, inter-valley), in bulk and surface recombination and tunneling rates, as well as emission processes. For extended currents in larger devices with over 1013 carriers per unit length the magnetic energy dominates the kinetic energy of drift motion, so the coherent quantum 1/f effect becomes dominant. The proposed research would apply this theory to solid state devices and microstructures, and would further develop the theory in the transition region between the conventional and coherent domains. We expect the proposed research to benefit high-tech applications through general and practical low 1/f noise design and optimization principles, and to improve the general understanding of the quantum 1/f effect as quantum chaos, or as a technically important fundamental law of nature.