Transport and Thermodynamic Properties of Mesoscopic Systems

对固体在低温下的输运和热力学性质进行理论研究，重点研究新型微观结构和半导体异质结构的物理性质。该研究将进一步扩展我们对介观和宏观导体中量子力学干涉效应及其与库仑相互作用和强磁场的相互作用的理解。主题将包括介观系统在非相互作用和相互作用模型下的热力学性质，弹道状态下的介观涨落现象及其在混沌系统量子理论中的解释，以及高磁场下二维电子系统的介观和宏观性质。计算将使用杂质平均摄动理论、半经典方法和随机矩阵理论进行分析，并使用递归格林函数技术进行数值计算。目标是获得目前处于实验研究前沿的现象的定量和微观描述，这些现象对未来的微电子技术具有重要意义。将研究介于大（宏观）和原子（微观）尺寸之间的器件中的电输运（电流）。这个介观区域是这样的，微观效应在宏观尺度上可以看到，导致不寻常的和有用的物理现象。除了影响我们对基础物理学的理解外，这些研究将对微电子学产生重要影响。

Theoretical studies will be conducted on the transport and thermodynamic properties of solids at low temperature focusing on the physics of novel microstructures and semiconducting heterostructures. The research will extend further our understanding of quantum mechanical interference effects and their interplay with Coulomb interactions and high magnetic field in mesoscopic and macroscopic conductors. Topics will include thermodynamic properties of mesoscopic systems in both non- interacting and interacting models, mesoscopic fluctuation phenomena in the ballistic regime and their explanation in terms of the quantum theory of chaotic systems, and both the mesoscopic and macroscopic properties of two-dimensional electron systems in high magnetic field. Calculations will be done analytically using impurity-averaged perturbation theory, semi-classical methods and random matrix theory, and numerically using recursive Green function techniques, for instance. The objective is to obtain a quantitative and microscopic description of phenomena which are currently at the very forefront of experimental investigations and which have important implications for future microelectronic technology. %%% Research will be done on electrical transport (current) in devices which are of intermediate between large (macroscopic) and atomic (microscopic) size. This mesoscopic region is such that microscopic effects are seen on the macroscopic scale resulting in unusual and useful physical phenomena. Besides affecting our understanding of basic physics, these studies will have important ramifications for microelectronics.