Superconducting Thin Films for High Frequency Microwave Applications

将在氧化镁和蓝宝石衬底上制备高质量的TlBaCaCuO外延薄膜。然而，这种外延生长存在一些问题，建议通过使用与TBCCO结构具有紧密晶格匹配的惰性外延层来缓冲衬底来克服这些困难。通过在薄的、高质量的CeO2缓冲层上建立的后沉积退火工艺来生长基于Tl的外延薄膜。如果成功，这一过程可能会取代目前生长在LaAlO3上的大部分材料，用于高频微波组件，因为频率可调整性是一个关键问题。

High quality, epitaxial TlBaCaCuO films on MgO and sapphire substrates will be prepared. However, some problems exist for such epitaxial growth and it is proposed to overcome these difficulties by buffering the substrate using an inert epitaxial layer, which has a close lattice match to the TBCCO structure. Growth of epitaxial Tl-based films via an established post deposition annealing process on top of thin, high quality CeO2 buffer layers will be undertaken. If successful, this process could replace much of the material currently grown on LaAlO3 for microwave components at high frequencies where frequency settability is a key issue.