Computer Simulation of Reactors for Chemical Vapor Deposition

化学气相沉积（CVD）是化学工业中的一种重要工艺 微电子和光学器件的制造。 是 用于存款外延半导体层的化合物 半导体、导体和绝缘体。 虽然 沉积膜的厚度根据沉积膜的厚度而变化。 应用中，薄膜必须以可控的 特性（纯度、成分、质地、厚度等）。 性能的公差限制非常严格， 电子和光学材料加工。 由于器械 尺寸变得更小，要求变得更高 严格。 特别地，膜厚度的均匀性是有利的。 关键在于保持相同的性能特征 在每个衬底上和从一个样品到另一个样品。 因为 膜的均匀性取决于前体的进入 气体的基板，一个清晰的了解治理 运输过程是必不可少的，以实现统一的 在大面积上的沉积厚度和组成。 目前可用的三维计算模型 对于CVD反应器是基于简化方面， 运输过程和化学动力学， 有限使用。 本研究的目的是开发一种 基于全三维非定常的完整模型 CVD反应器流动的控制方程的形式。 由于 使用有效和准确的数值程序， 模型只需要几分钟就可以运行一个工作站。 因此，该模型可以以常规方式用于 设计、研究和优化。 它会带来更好的 理解CVD中的传输现象和反应 过程，并将有助于设计能够 产生均匀的膜厚度和成分， 地区

Chemical vapor deposition (CVD) is an important process in the manufacture of microelectronic and optical devices. It is used to deposit layers of epitaxial semiconductors, compound semiconductors, conductors, and insulators. Although the thickness of the deposited film varies according to the application, the films must be produced with controllable properties (purity, composition, texture, thickness, etc.). The tolerance limits on the properties are very stringent in electronic and optical material processing. As the devices become smaller in size, the requirements become even more stringent. In particular, the uniformity of film thickness is critical in maintaining the same performance characteristics across each substrate and from sample to sample. Because the film uniformity is governed by the access of the precursor gases to the substrate, a clear understanding of the governing transport processes is essential to achieve uniformity of the deposition thickness and composition over large areas. The currently available three-dimensional computational models for CVD reactors are based on simplifications with regard to the transport processes and chemical kinetics and are of limited use. The objective of this research is to develop a complete model based on the full three-dimensional unsteady form of the governing equations for CVD reactor flows. Due to the use of efficient and accurate numerical procedures, the model will require only a few minutes to run a workstation. Therefore, the model can be used in a routine manner for design, research and optimization. It will lead to better understanding of the transport phenomena and reactions in CVD processes and will aid in the design of reactors capable of producing uniform film thickness and composition over large areas.