ROW: Processing/Property Relationships in Porous Silicon Sensors for Microelectronics

小行星9225134 研究特定II-VI族化合物半导体的光增强MOCVD（或MOMBE）外延中重要的基本表面化学机制。 该研究将利用飞行时间质谱和全内反射红外光谱以及各种标准的超高真空表面探针来确定II-VI表面上光诱导反应的未知机制。 此外，将测量反应截面、产率和产物，在这些测量过程中，将考虑适当制备原子级清洁表面的技术。 研究的主要表面将是ZnSe和CdTe上的表面。 该研究预计将深入了解引发反应的过程，并指导选择光源波长，前体分子和II-VI材料外延的一般生长条件。 这项研究有望提供更深层次的基本理解表面上的光辅助化学及其与化合物半导体材料的光辅助外延的关系。从应用的角度来看，研究结果将提供指导使用激光和其他光源做图案在MOCVD外延室，并将是重要的，在II-VI光电子技术的总体进步，导致在先进的设备和集成电路的性能改进，用于计算，信息处理和电信。 ***

9225134 Osgood Investigations of fundamental surface-chemical mechanisms important in light-enhanced MOCVD (or MOMBE) epitaxy of specific II-VI compound semiconductors will be conducted. The research will utilize time-of-flight mass spectroscopy and total-internal-reflection infrared spectroscopy as well as a variety of standard UHV surface probes to determine the as-yet-unknown mechanisms for photo-induced reactions on II-VI surfaces. In addition, reaction cross-sections, yields, and products will be measured, and in the course of these measurements, consideration will be given to techniques for proper preparation of atomically clean surfaces. The primary surfaces for study will be those on ZnSe and CdTe. The study is expected to give insight into the processes initiating reactions and to guide selection of light-source wavelengths, precursor molecules, and general growth conditions for epitaxy of II-VI materials. %%% This research is expected to provide deeper fundamental understanding of photo-assisted chemistry on surfaces and its relation to photo-assisted epitaxy of compound semiconductor materials. From an application point of view, the results will provide guidance for the use of lasers and other light sources to do patterning in an MOCVD epitaxy chamber, and will be important to the general advancement in the technology of II-VI optoelectronics leading to improvements in the performance of advanced devices and integrated circuits used in computing, information processing, and telecommunications. ***