U.S.-France Cooperative Research: Material Aspects of Silicon Carbide (SiC) Metallization

9313955 Nicolet美国加州理工学院的Marc a . Nicolet和法国格勒诺布尔高等师范学院的Roland Madar在电子材料领域的三年合作研究。他们的研究目的是研究碳化硅（SiC）与金属之间的反应和反应产物。他们将重点研究一些过渡金属薄膜与SiC之间的反应。美国研究人员为此次合作带来了稳定金属/半导体触点开发方面的专业知识，重点是硅和砷化镓。法国在合成单晶和多晶耐火材料，特别是金属硅化物方面的专业知识补充了这一点。碳化硅是制造高温、大功率、高频电子器件的理想材料。它也用于纤维增强金属基复合材料。它是大功率、高温二极管和晶体管中最有前途的材料。该项目将促进对这些材料的理解，并为碳化硅器件的设计提供基础。＊＊＊

9313955 Nicolet Three-year award supports U.S.-France cooperative research in electronic materials between Marc A.-Nicolet of the California Institute of Technology and Roland Madar of the Ecole Normale Superieure de Genie Physique in Grenoble, France. The objective of their research is to study the reactions and reaction prodects between silicon carbide (SiC) and metals. They will focus on reactions between a selection of thin transition metal films and SiC. The U.S. investigator brings to this collaboration expertise in the development of stable metal/semiconductor contacts emphasizing silicon and gallium arsenide. This is complemented by French expertise in the synthesis of mono-and polycrystalline refractory materials, especially metal silicides. Silicon carbide is an attractive material for high temperature, high power and high frequency electronic devices. It is also used in fiber-reinforced metal-matrix composites. It is the most promising material for high-power and high-temperature diodes and transistors. This project will advance understanding of these materials and provide the basis for design of silicon carbide devices. ***