Luttinger Liquid and Chaotic Transport in Wet-etched Ballistic Gallium Arsenide-Aluminum Gallium Arsenide Transistors with Multiple Gates

9405469沃什伯恩首席调查员将使用交错或重叠的门来管理载流子进入和离开刻蚀成弹道异质结构的定制腔的传输，以研究新的量子传输效应。研究的两个主要目标是(1)低载流子密度和强磁场下导线中载流子之间的Luttinger关联和(2)特殊设计的腔体的混沌响应。在这两种情况下，栅极将覆盖整个设备，以帮助通过静电势进行筛选，并允许控制载流子浓度。单独的栅极将控制探头中的传输系数，馈电和感测导线和空腔。这将首次允许单独控制这两个关键参数，这反过来将允许对这两个新的传输物理领域进行更详细的探索。首席研究员建造了新类型的弹道电子设备，电子在完美、无序的晶体中传播，并仅与设备设计师创造的特征碰撞。这些设备将允许比以前尝试过的更全面地控制电气参数。这些设备将被用来理解物理界当前和根本感兴趣的两种新发现的电子效应。第一种是一种微妙的方式，即电子在受限的电子海洋中相互排斥，因此电子不能轻易逃脱排斥力。第二种是在可能出现不规则轨道的情况下电子的混沌运动。***

9405469 Washburn The Principal Investigator will employ interlaced or overlapping gates to govern transmission of carriers into and out of tailored cavities etched into ballistic heterostructures to study a new quantum transport effects. The two main targets of the research are (1) Luttinger correlations among carriers in wires at low carrier density and high magnetic field and (2) chaotic response from specially designed cavities. In both cases gates will cover the entire device to aid in screening by the electrostatic potentials and to allow control over carrier concentration. Separate gates will control transmission coefficients in the probes feeding and sensing the wires and cavities. This will allow, for the first time, individual control over these two critical parameters, which in turn will allow more detailed exploration of these two new areas of transport physics. % % % % The Principal Investigator build new kinds of ballistic electrical devices where the electrons travel in perfect, disorder-free crystals and collide only with features created by the architects of the devices. The devices will allow more complete control of the electrical parameters than has been attempted before. The devices will be used to understand two newly discovered electronic effects of current and fundamental interest to the physics community. The first is a subtle way in which electrons repel each other in the midst of a sea of electrons that is confined so that the electrons cannot easily escape the repulsive forces. The second is the chaotic motion of electrons in situations where irregular orbits are possible. ***