Development of a Device for the Simultaneous Application of Uniaxial Stress and Hydrostatic Pressure

为开发一种对半导体和高温超导体同时施加单轴应力和静水压力的独特装置提供了资金。用边界元方法计算了该装置承受1.4 Gpa静水压力和1 Gpa单轴应力，安全系数为1.5。高压实验对于高温超导体的研究和理论模型的检验是重要的，以获得改进化合物的线索。由于能带结构的改变，对半导体施加外应力也是重要的。目前，人们正在花费巨大的努力来设计半导体的能带结构，以改进电子和光电子器件。由于这一领域的商业重要性，这项工作中将要开发的装置将用于激光二极管的研究。

Funds are provided for development of a unique device for the simultaneous application of uniaxial stress and hydrostatic pressure to semiconductor and high-temperature superconductors. Using the Boundary Element Method, the device is calculated to withstand 1.4 GPa hydrostatic pressure and 1 GPa uniaxial stress with a safety factor of 1.5. High-pressure experiments are important for the study of high-temperature superconductors, and for the testing of theoretical models to acquire clues for the improvement of the compounds. The application of an external stress to a semiconductor is also significant due to the modification of the band structure. Currently, enormous effort is being expended in order to engineer the band structure of semiconductors for improved electronic and optoelectronic devices. The device to be developed in this work will be used in the investigation of laser diodes owing to the commercial importance of this area.