Buried Layer Interconnect Technology for III-V Based Devices

硅钻石技术公司建议开发一种新的埋层互连技术，该技术基于V组Sb与III-V半导体家族的集成。Sb在异质结构中与III-V半导体的显著兼容性是由于每个晶体的(111)面上的原子表面网络几乎相同的结果。该技术将提供第一个真正的能力来生产超低电阻掩埋互连，结合不退化的半导体过度生长能力，从而为三维电路架构和新一代器件(如高速金属晶体管)提供技术。第一阶段将展示基于基本GaSb/Sb/GaSb多层膜的互连能力。第二阶段将生产包括金属晶体管在内的器件。

SI Diamond Technology, Inc., proposes to develop a novel buried layer interconnect technology, based on the integration of the group V Sb with the III-V semiconductor family. The remarkable compatibility of Sb with the III-V semiconductors in a heterostructure is a consequence of the nearly identical atomic surface nets in the (111) planes of each crystal. The technology will provide the first true capability to produce ultra low resistance buried interconnects, combined with undegraded semiconductor overgrowth capability, therefore providing a technology for three-dimensional circuit architectures and new generation devices such as high speed metal based transistors. An interconnect capability, based on elementary GaSb/Sb/GaSb multilayers will be demonstrated in Phase I. Devices, including a metal-based transistor will be produced in Phase II.