Research Equipment Grant: Titanium Sapphire Laser System

9500011大厅圣母大学电气工程系将使用申请的资金购买可调谐钛：蓝宝石激光器，氩离子泵激光器和闭环热交换器泵激光器水冷却。 该设备将为新的集成光电子器件和集成电路（OEIC）的完整开发和表征提供必要的能力。 这些结构将使用一种新的含铝合金半导体氧化技术（砷化铝镓（A1 GaAs）的“天然”氧化物）制造。 平面波导透镜、掩埋条形波导和集成激光源将成为OEIC进一步发展的有用“积木”元件。 这些元件将应用于实现新颖的和更高性能的集成主振荡器功率放大器（MOPA）设备。 MOPA器件作为一种紧凑高效的半导体激光光源，在产生高功率（5 W）、高相干辐射方面具有巨大的潜力，值得进一步研究。 新的A1 GaAs原生氧化物也将被研究作为一种潜在的新的稀土离子主体材料，有望将掺杂剂纳入III-V族半导体的新方法，以获得单片集成，光泵，光谱尖锐，温度不敏感的发光源，具有新的性能和波长。 ***

9500011 Hall The Department of Electrical Engineering at the University of Notre Dame will use the requested funds to purchase a tunable Titanium:Sapphire laser, Argon ion pump laser, and closed loop heat exchanger for pump laser water cooling. The equipment will provide the necessary capabilities for the complete development and characterization of new integrated optoelectronics devices and integrated circuits (OEICs). These structures will be fabricated using a new oxidation technology for aluminum-bearing alloy semiconductors (the "native" oxide of aluminum-gallium-arsenide (A1GaAs)). The planar waveguide lenses, buried strip waveguides, and integrated laser sources to be developed will be useful "building block" components broadly applicable in the further evolution of OEICs. These components will be applied for the realization of novel and higher-performance integrated master oscillator power amplifier (MOPA) devices. As compact and efdicient semiconductor laser sources, MOPA devices have enormous demonstrated potential for generating high-power (5 W), highly- coherent radiation, and strongly merit further research. The new A1GaAs native oxide will also be investigated as a potential new host material for rare-earth ions, promising a novel approach for incorporating the dopants into III-V semiconductors to obtain monolithically-integrated, optically-pumped, spectrally sharp, temperature-insensitive luminescence sources with new properties and wavelengths. ***