Surface Chemistry of Electronic Materials

在这个由化学和材料部门支持的项目中， 研究，施瓦茨和Bernasek将研究制备和结构 氧化的金属或金属氧化物表面之间的界面的说明 和有机金属络合物衍生的覆盖层。 这项研究结合了 有机金属化学和表面科学方面。 方法将 开发用于激活导体或绝缘体的表面， -OH基团的引入。 金属原子或 将研究具有这些表面基团的有机金属络合物， 与溶液类似物相比。 将有可能创建各种 以特定和可重复的方式混合覆盖层的类型。这些 界面层将共价键合在 合成的 调查将平行进行散装氧化物或 氮模拟衬底在环境和超高真空下使用 单晶支持。 使用可表征的单晶 材料将使调查的准确性质和程度 的共价相互作用之间的覆盖层和表面的 支持. 开发表面结合物质的合成方法，以及 表面分析技术在类似块体和薄膜中的应用 支持，将增加我们对材料合成的理解， 微观层次的界面结构。这些信息构成了 理解介观物理化学界面的基础 作为电子学和光电子学的重要性日益增加 组件变得更小和更复杂。

In this project supported by the Divisions of Chemistry and Materials Research, Schwartz and Bernasek will study the preparation and structural elucidation of interfaces between oxided metal or metal oxide surfaces and organometallic complex-derived overlayers. This research combines aspects of organometallic chemistry and surface science. Methods will be developed for activation of surfaces of conductors or insulators by introduction of -OH groups. The reaction of metal atoms or organometallic complexes with these surface groups will be studied and contrasted with solution analogs. It will be possible to create various types of mixed overlayers in specific and reproducible ways. These interfacial layers will covalently bond between components of the composite. Investigations will be performed in parallel on bulk oxide or nitrogen analog substrates under ambient and ultra-high vacuum using single crystal supports. The use of characterizable single crystal materials will enable an investigation of the precise nature and extent of covalent interaction between the overlayer and the surface of the support. %%% Development of methodology for synthesis of surface-bound species, and application of surface analytical techniques to analogous bulk and film supports, will augment our understanding of materials synthesis and interface structure at the microscopic level. Such information forms a basis for understanding mesoscopic physical and chemical interfacial properties of increasing importance as electronics and optoelectronics components become smaller and more complex.