The Role of Hydrogen in Controlled Growth and Design of Low-Temperature Electronic Materials

9509790 Boland该研究项目旨在对低温化学气相沉积（CVD）的化学性质进行基本了解，重点是氢在硅CVD中的作用。 变温扫描隧道显微镜（VT-STM）的应用和STM固有的原子分辨能力与不同的操作和温度范围将提供访问的生长表面上的实时动态。 硅-氢表面化学的基本机制及其在促进低温生长中的作用，以及氢原子在控制表面扩散和相关过程中的活动，在降低的温度下，以提高外延将进行研究。本研究项目的主要目标是建立对薄膜合成和电子材料加工的关键特殊现象的更基本的理解，并通过加工方法的修改将这种理解与先进微电子器件的发展联系起来。此外，该计划的一个重要特点是在一个基本的和技术上重要的领域培养研究生和本科生。从这个研究项目中获得的知识和理解预计将有助于提高计算，信息处理和电信中使用的先进设备的性能。***

9509790 Boland This research project aims for fundamental understanding of the chemistry of low temperature chemical vapor deposition(CVD), with emphasis on the role of hydrogen in silicon CVD. The application of variable temperature scanning tunneling microscope (VT-STM) and inherent atom-resolved capabilities of STM with different operation and temperature ranges will provide access to real-time dynamics on the growth surface. Basic mechanisms of silicon-hydrogen surface chemistry and its role in promoting low temperature growth as well as the activities of hydrogen atoms in controlling surface diffusion and related processes at reduced temperatures to enhance epitaxy will be studied. %%% The primary goal of this research project is to establish greater basic understanding of particular phenomena critical to thin film synthesis and processing of electronic materials, and to relate this understanding to the development of advanced microelectronics devices through modifications in processing methods. Additionally, an important feature of the program is the training of graduate and undergraduate students in a fundamentally and technologically significant area. The knowledge and understanding gained from this research project is expected to contribute generally to improving the performance of advanced devices used in computing, information processing, and telecommunications. ***