SBIR PHASE I: High Power Mid-IR Laser Diodes

这个小型企业创新研究第一阶段项目计划开发高功率中红外连续半导体激光二极管。中红外激光二极管将通过MOCVD在InP衬底上生长，使用一种新的技术来克服InP系统中对波长的应变限制。通过利用成熟的InP基激光器的生长和制造技术，将在这个以前无法进入的波长范围内获得高功率、低阈值和高效率的激光器。中红外激光器的发展将在气体监测、激光雷达系统和红外对抗等方面有重要的应用。通过MOCVD生长这些长波长激光器将使大规模生产成为可能，从而降低这些器件的成本。

This Small Business Innovation Research Phase I project proposes to develop high-power mid-IR CW semiconductor laser diodes. The mid-IR laser diode will be grown via MOCVD on an InP substrate using a novel technique that overcomes the strain limitation on wavelength in the InP system. By making use of the well-developed technology for the growth and fabrication of InP-based lasers, high power, low-threshold and efficient lasers will be obtained in this previously inaccessible wavelength range. The development of mid-IR lasers will have important applications for gas monitoring, LIDAR systems, and Infra-red countermeasures. Growth of these long wavelength lasers by MOCVD will enable large scale production and hence reduce the cost of these devices.