Acquisition of Advanced Equipment for Rapid Thermal and High Density Plasma Processing for Integrated Circuits and Flat Panel Displays

9601835哈特利快速热退火系统将能够形成用于CMOS型晶体管、多介质非易失性半导体存储器件的超薄栅绝缘体，并促进新型碳化硅MOS器件，特别是所谓的MCT或MOS控制晶闸管的新技术的发展。新的硅化物接触冶金和非晶硅薄膜的快速晶化将被用于硅集成电路和基于TFT的平板显示器。此外，新的RTA系统将在植入激活退火期为我们提供对器件尺寸的关键控制，这对于实现我们的新的纳米电子器件是必不可少的。电感耦合等离子体高密度等离子体反应器将用于开发IC和平板显示器应用的新材料和新沉积工艺。这些材料和工艺将包括：作为金属间介质材料的低介电常数氟碳薄膜，用于IC和平板显示器应用的高质量非晶硅和二氧化硅薄膜，以及用于单晶硅、多晶硅和化合物半导体器件的新型等离子体氢化、氧化和氮化工艺。公司将购买快速热处理系统和感应耦合高密度等离子沉积系统，以便在利哈伊大学进行以下微电子学领域的高级研究和培训：a)硅集成电路，b)化合物半导体微波器件，c)薄膜晶体管平板显示器。该设备将通过让学生接触S的基本知识和新的单晶片加工方法的应用来加强他们的教育。

9601835 Hatalis The rapid thermal annealing (RTA) system will enable the formation of ultrathin gate insulators for CMOS transistors, multi-dielectric nonvolatile semiconductor memory devices and promote the development of a new technology for novel silicon carbide MOS devices especially the so-called MCT or MOS Controlled Thyristors. New silicide contact metallurgy, and rapid crystallization of amorphous silicon films will be explored for both silicon ICs and TFT based flat panel displays. Furthermore the new RTA system will provide us with critical control of the device dimensions during the implant activation anneals which is essential for the realization of our new nanoelectronic devices. The ICP high density plasma reactor will be used in the development of new materials and new deposition processes for both IC and flat panel display applications. Such materials and processes will include: low dielectric constant fluorocarbon films as intermetal dielectric material, high quality amorphous silicon and silicon dioxide films deposited at high rates for IC and flat panel display applications, and novel plasma hydrogenation, oxidation and nitridation processes for single crystal silicon, polysilicon and compound semiconductor devices. A rapid thermal processing system and an inductively-coupled high density plasma (ICP) deposition system will be purchased in order to enable advanced research and training at Lehigh University on the following microelectronics areas: a)silicon integrated circuits ,b) compound semiconductor microwave devices, and c) thin film transistor flat panel displays. The equipment will enhance the education of students by exposing them to the fundamental s and applications of new singly wafer processing approaches.