Stable Wavelength Strained Quantum Wire Lasers

本文的研究目标是在应变量子线（QWR）结构的分子束外延生长、多轴应变工程和基于高效能带结构模型的低维应变结构计算机建模等领域发展技术，使波长稳定的半导体激光器的制造成为可能，用于光纤通信和信息应用。具体来说，我们计划制造波长稳定的1.55 (mGaxInl-xAs/InP和0.98 (m GaxInl-xAsyP1-y/GaAs激光器，它们利用MBE生长过程中应变诱导的横向层有序（SILO）过程在原位形成的应变QWR有源区。稳定波长是由SILO工艺在QWR区域产生的独特多轴应变产生的。预计通过在QWR结构中使用这种多轴应变技术，将观察到新的量子和光学效应，这将反过来导致具有新功能和/或性能改进的新器件。我们的愿景是，本研究的完成将导致1)对创新生长方法的新见解，2)对多轴应变工程的认识和控制，3)对应变量子线结构和器件中新的物理效应的理解，4)开发新的高效建模技术，以及5)物理实现具有改进性能特征的新型应变量子线激光器和器件。* * *

29617153 Cheng The goals of the proposed research are to develop technologies in the fields of epitaxial growth of strained quantum wire (QWR) structures by molecular beam epitaxy (MBE), multi-axial strain engineering, and computer modeling of low dimensional strained structures based on efficient band-structure models to make possible the fabrication of wavelength stable semiconductor lasers for optical fiber communication and information applications. Specifically, we plan to fabricate wavelength stable 1.55 (mGaxInl-xAs/InP and 0.98 (m GaxInl-xAsyP1-y/GaAs lasers which employ strained QWR active regions formed in situ by the strain induced lateral-layer ordering (SILO) process during MBE growth. The stable wavelength results from a unique multi-axial strain generated in the QWR region by the SILO process. It is expected that by using this multi-axial strain technique within a QWR structure, new quantum and optical effects will be observed which will in turn lead to novel devices with new functions and/or improved performance. It is our vision that the completion of this research should lead to 1) new insight into innovative growth methods, 2) knowledge and control of multi-axial strain engineering, 3) an understanding of new physical effects in strained quantum wire structures and devices, 4) the development of new efficient modeling techniques, and 5) the physical realization of novel strained quantum wire lasers and devices with improved performance characteristics. ***