High Pressure Magneto-Optical Studies of Novel Localized States in Compound Semiconductors and their Heterostructures

9624029温斯坦程序研究了高静水压对III-V半导体和异质结中浅(氢)杂态和深杂质态的能量和竞争的影响，以及对这些系统中稳定激子态的可能出现和性质的影响。这项工作将涉及远红外(FIR)磁谱和近红外/可见光光学实验，使用一种独特的钻石压头设备，实现在0150Kbar、2300K和0-17T范围内的压力、温度和磁场的现场调谐。该方法将允许直接比较在相同条件下在相同样品上从FIR到可见光的广泛能量范围内记录的光谱结果，这是迄今为止所不可能的。这样的研究将产生(1)对于许多不同替代物种半导体中浅杂质态和深杂质态(稳定和亚稳态)之间的竞争的更清晰的图景，(2)应该有助于建立掺杂的砷化铝/砷化镓量子阱结构中多体效应的载流子密度依赖性，以及(3)应该能够探索在铟-砷化物/铝-镓-锑系统中可能稳定的激子基态的条件和性质。该程序研究了高静水压对III-V半导体和异质结构中浅(氢)杂态和深杂质态的能量和竞争的影响，以及对这些系统中稳定激子态的可能出现和性质的影响。这项工作将包括远红外(FIR)磁谱和近红外/可见光光学实验，使用一种独特的金刚石顶锤装置，实现在0-150Kbar，2-300K和0-17T范围内的压力、温度和磁场的原位调谐。这种方法将允许直接比较从远红外到可见光的各种能量范围内记录的光谱结果。这些实验将在相同的条件下在相同的样品上进行，这是迄今为止不可能实现的。这样的研究应该产生：(1)对于许多不同的替代物种，半导体中浅杂质态和深杂质态(包括稳定和亚稳态)之间竞争的更清晰的图像，(2)应该有助于建立掺杂的铝-镓-砷量子阱结构中多体效应的载流子密度依赖性，以及(3)应该能够探索在铟-砷/铝-镓-锑系统中可能稳定的激发基态的条件和性质。

9624029 Weinstein The program investigates the effect of high hydrostatic pressure on the energy and competition of shallow (hydrogenic) and deep impurity states in III-V semiconductors and heterostructures, as well as on the possible occurrence and properties of stable excitonic states in these systems. The work will involve far infrared (FIR) magneto-spectroscopy and near infrared/visible optical experiments carried out using a unique diamondanvil apparatus that achieves in-situ tuning of pressure, temperature and magnetic field over the ranges 0150 kbar, 2300K and 0-17T. The approach will permit direct comparison of spectroscopic results recorded over a wide range of energies from the FIR to the visible on the same samples under the same conditions, which has not heretofore been possible. Such studies should yield (1) a much clearer picture of the competition between shallow and deep (both stable and metastable) impurity states in semiconductors for many different substitutional species, (2) should help establish the carrier density dependence of many-body effects in doped aluminumgallium arsenide/gallium-arsenide quantum well structures, and (3) should enable the exploration of conditions and properties for possible stable excitonic ground states in indium-arsenide/aluminium- gallium-antimony systems. %%% The program investigates the effect of high hydrostatic pressure on the energy and competition of shallow (hydrogenic) and deep impurity states in III-V semiconductors and hererostructures, as well as on the possible occurrence and properties of stable excitonic states in these systems. The work will involve far infrared (FIR) magneto- spectroscopy and near infrared/visible optical experiments carried out using a unique diamond-anvil apparatus that achieves in-situ tuning of pressure, temperature and magneti c field over the ranges 0- 150 kbar, 2-300K and 0-17T. The approach will permit direct comparison of spectroscopic results recorded over a wide range of energies from te far-infra-red to the visible. The experiments will be conducted on the same samples under the same conditions, which has not heretofore been possible. Such studies should yield: (1) a much clearer picture of the competition between shallow and deep (both stable and metastable) impurity states in semiconductors for many different substitutional species, (2) should help establish the carrier density dependence of many-body effects in doped aluminum- gallium-arsenide quantum well structures, and (3) should enable the exploration of conditions and properties for possible stable excitionic ground states in indium-arsenide/aluminium-gallium- antimony systems.***