SGER: Nested-Well Penning-Malmberg Trap for use as a Semiconductor Processing Plasma Reactor

9627612卡洛斯奥多涅斯这是一个探索性研究（SGER）的小型赠款，用于开发嵌套井Penning-Malmberg等离子体处理反应堆的第一个分析和计算描述。新的嵌套阱配置可以允许将重叠的离子和电子等离子体限制在内部和外部电势威尔斯阱内，这提供了一种使被限制的离子密度超过在传统的单阱Penning-Malmberg阱内发生的严重离子密度极限的手段。 因此，当布置在这种新颖的嵌套阱配置中时，Penning-Malmberg阱变得潜在地适合用作微电子和其他领域中的材料处理等离子体反应器。 这种类型的反应器相对于现有反应器的潜在优点是显著的：通过对到处理表面的等离子体离子通量的近乎完美的控制来改善对物理到化学蚀刻速率的控制、更清洁的等离子体、用于处理中的近乎均匀性的平衡平坦等离子体密度分布以及即使通过改善的等离子体约束控制也低的功率要求。除了详细的理论分析，形成了工作的主体，建议的后续实验验证操作描述的设计。 ***

9627612 Carlos Ordonez This is a Small Grant for Exploratory Research (SGER) for the development of the first analytical and computational description of a nested well Penning-Malmberg plasma processing reactor. The new nested well configuration may allow confinement of overlapping ion and electron plasmas within inner and outer electric potential wells, which provides a means for the confined ion density to exceed the severe ion density limit which occurs within the traditional single well Penning-Malmberg trap. When arranged in this novel nested well configuration therefore, Penning-Malmberg traps become potentially suitable for use as materials processing plasma reactors in microelectronics and other areas. The potential advantages of this type of reactor over existing reactors are significant: improved control of the physical to chemical etching rates with near perfect control of the plasma ion flux to processed surface, cleaner plasmas, equilibrium flat plasma density profiles for near uniformity in processing and low power requirements even with improved plasma confinement control. The design of a proposed follow-on experiment for verifying the operation description is included, in addition to the detailed theoretical analysis which forms the main body of the work. ***