Interband Coupling in Type-II Quantum Wells Studied with Scanning Tunneling Microscopy

9633011 Weimer本研究项目旨在从根本上了解量子阱半导体结构中界面质量与载波函数重叠之间的关系。 该方法是研究Al（Ga）Sb势垒对模型InAs/Ga（In）Sb/Al（Ga）Sb结构中带间耦合的影响，该结构包括II型量子阱和量子级联激光器中的有源区。 扫描隧道显微镜（STM）和光谱（STS）将用于提供界面质量的基本数据，并将与载波功能重叠。 从STM和STS数据分析中得出的见解将用于MBE生长和后续处理研究，以优化材料质量，生长顺序，II型中红外激光器的设计和制造。该研究将在先进的电子/光子器件和集成电路的几个方面的技术相关性的基础水平贡献基本材料科学知识。 此外，从该研究项目中获得的知识和理解预计将通过提供设计和生产改进材料和材料组合的基本理解和基础，以提高先进器件和电路的性能。 该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。***

9633011 Weimer This research project aims to gain fundamental understanding of the relationship between interface quality and carrier wave function overlap in quantum well semiconductor structures. The approach is to examine the influence of Al(Ga)Sb barriers on the interband coupling in model InAs/Ga(In)Sb/Al(Ga)Sb structures that comprise the active regions in type-II quantum well and quantum cascade lasers. Scanning tunneling microscopy(STM) and spectroscopy(STS) will be used to provide fundamental data on interface quality and will be related to carrier wave function overlap. The insights developed from analysis of the STM and STS data will be used in MBE growth and subsequent processing studies to optimize material quality, growth sequence, design and fabrication of type-II mid-IR lasers. %%% The research will contribute basic materials science knowledge at a fundamental level of technological relevance to several aspects of advanced electronic/photonic devices and integrated circuitry. Additionally, the knowledge and understanding gained from this research project is expected to contribute in a general way to improving the performance of advanced devices and circuits by providing a fundamental understanding and a basis for designing and producing improved materials, and materials combinations. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***