SBIR Phase I: Chemical Vapor Deposition (CVD) of Copper Alloys from Bimetallic, Single Source Precursors

这个第一阶段的小企业创新研究项目将通过双金属单源前驱体的热分解来实现铜（Cu）和铜合金薄膜的化学气相沉积（CVD）。本文将合成一类新型双金属单源Cu(1)（13-双酮ato）配合物，并对其进行表征和优化，用于掺杂铜膜（合金）的CVD膜生长。路易斯碱（含有第二个金属中心）和13-二酮酸配体的特性都将被改变，以“定制”沉积高纯度铜合金薄膜的前驱体性质。研究铜配合物的结构-性能关系及其在化学气相沉积中的应用。利用这种方法，可以探索共形掺杂Cu膜作为集成电路中的高性能互连。沉积铜合金的CVD金属化工艺将为高性能集成电路的形成提供一种机制。使用低电阻率互连，与低介电常数材料串联，提供了优越的器件性能的途径。此外，铜合金可以显著改善亚微米级互连的电迁移和热稳定性。在第二阶段，将与一家主要IC制造商和CVD工具供应商合作，评估互连工艺的商业潜力。第一阶段的研究将促进高性能逻辑和存储设备的制造。第三阶段的全球商业化预计将影响一个相当大的市场。

*** 96-60730 Baum This Phase I Small Business Innovation Research project will achieve chemical vapor deposition (CVD) of copper (Cu) and copper-alloy films via thermal decomposition of bimetallic, single source precursors. A novel class of bimetallic single source Cu(1)(13-diketonato) complexes will be synthesized, characterized and optimized for CVD film growth of doped copper films (alloys). Both the Lewis base, which contains the second metal center, and 13-diketonate ligand identity will be altered to "tailor" the precursor properties for the deposition of high-purity copper alloy films. The copper complexes will be studied to correlate structure -property relationships and utility for CVD. Using this approach, conformal, doped Cu films can be explored as high-performance interconnects in integrated circuits. A CVD metallization process for the deposition of copper alloys will provide a mechanism for the formation of high performance integrated circuits. Using low resistivity interconnects, in tandem with low dielectric constant materials, provides a pathway to superior device performance. Further, copper alloys can dramatically improve both the electromigration and thermal stability of the submicron sized interconnects. In Phase II, collaboration with a major IC manufacturer and CVD tool vendor will be used to evaluate the commercial potential of the interconnect process. This Phase I research will facilitate fabrication of high performance logic and memory devices. World-wide commercialization in Phase III is expected to impact a sizeable market.