SBIR Phase II: Second Generation Lead Chemical Vapor Deposition Precursors for Lead Titenate

本研究将重点优化第一阶段确定的铅配合物的物理性质，作为铁电材料化学气相沉积（CVD）的更安全，更易挥发的前驱物。这些先导CVD前驱体将包含围绕先导中心的配体，以优化试剂的物理、化学和环境特性。将展示器件级锆钛酸铅薄膜的沉积，并开发大规模合成方法。CVD是最有前途的铅基铁电体制造方法，这些新的铁电体将专门设计以满足高纯度薄膜生长和当前的安全要求。这使得许多电子器件，包括非易失性存储器，电光空间光调制器，压电致动器和热释电红外探测器都是理想的。

This research will focus on optimizing the physical properties of lead complexes identified in Phase I as safer, more volatile precusors for chemical vapor deposition (CVD) of ferroelectric materials. These lead CVD precursors will contain ligands surrounding the lead center carefully selected to optimize the physical, chemical, and environmental characteristics of the reagents. Deposition of device quality lead zirconate titanate films will be demonstrated and large scale synthetic methods will be developed. CVD is the most promising manufacturing method for lead based ferroelectrics, and these new ferroelectrics will be specifically designed to meet high purity film growth and current safety requirements. This makes desirable for numerous electronic devices including non-volatile memories, electro-optic spatial light modulators, piezoelectric actuators, and pyroelectric infrared detectors.