SBIR Phase II: Second Generation Lead Chemical Vapor Deposition Precursors for Lead Titenate

SBIR 第二阶段：钛酸铅的第二代铅化学气相沉积前驱体

• 批准号: 9509175
• 负责人: Thomas Baum
• 金额: $ 30万
• 依托单位: Advanced Technology Materials, Inc.
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-12-01 至 1998-11-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9509175&HistoricalAwards=false
• 关键词: SBIR; Phase; II; Second; Generation

This research will focus on optimizing the physical properties of lead complexes identified in Phase I as safer, more volatile precusors for chemical vapor deposition (CVD) of ferroelectric materials. These lead CVD precursors will contain ligands surrounding the lead center carefully selected to optimize the physical, chemical, and environmental characteristics of the reagents. Deposition of device quality lead zirconate titanate films will be demonstrated and large scale synthetic methods will be developed. CVD is the most promising manufacturing method for lead based ferroelectrics, and these new ferroelectrics will be specifically designed to meet high purity film growth and current safety requirements. This makes desirable for numerous electronic devices including non-volatile memories, electro-optic spatial light modulators, piezoelectric actuators, and pyroelectric infrared detectors.

这项研究将集中在优化物理性能的铅配合物确定在第一阶段作为更安全，更易挥发的前体化学气相沉积（CVD）的铁电材料。 这些铅CVD前体将包含精心选择的围绕铅中心的配体，以优化试剂的物理，化学和环境特性。 沉积设备质量锆钛酸铅薄膜将被证明和大规模的合成方法将被开发。 CVD是铅基铁电体最有前途的制造方法，这些新的铁电体将专门设计，以满足高纯度薄膜生长和电流安全要求。 这使得包括非易失性存储器、电光空间光调制器、压电致动器和热释电红外检测器的许多电子设备是期望的。