CAREER: Atomic Mechanisms at Interfaces and Defects in Semiconducting Materials
CAREER: Atomic Mechanisms at Interfaces and Defects in Semiconducting Materials
批准号:
9733895
负责人:
Nigel Browning
金额:
$30.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
1998
资助国家:
美国
项目状态:
已结题
起止时间:
1998-04-01 至 2002-03-31
中文摘要
9733895布朗宁这个职业项目的目标是开发一个与下一代半导体材料和器件相关的综合研究和教育计划。该项目致力于对半导体材料中结构-性质关系的原子水平的理解,以及一个平行的材料科学教育计划。这项研究将利用最近开发的相关原子分辨率Z-对比度成像和扫描透射电子显微镜(STEM)中的电子能量损失谱(EELS)技术来探测半导体的内部界面和缺陷,目的是确定单个原子位的原子结构、组成和电子结构。将对单个界面或缺陷的电子和光学属性进行建模,并根据基本原子属性构建整体材料属性。与传统的高分辨率成像技术不同,传统的高分辨率成像技术必须将图像和模拟匹配,这种方法允许调查真实的材料缺陷和界面。研究内容包括GaN和碳化硅,ITO/n-GaAs,ZnSe/Fe磁性多层膜,以及氮对VLSI中Si和SiGe氧化的影响。该项目涉及与大学材料增长小组和行业建立的合作,纳入与先进设备概念和开发相关的增长和表征之间的反馈。半导体的原子尺度研究是研究和教育相结合的理想选择。CD播放机或计算机等日常物品的操作与其部件的原子结构之间的联系将被用来强调材料科学的基本特征,以及发现的兴奋。类似的基于项目的学习理念也将被纳入本科课程。PI将教授一门新的实验材料物理课程,重点将放在材料的基本性质和应用上。与此平行的还有一门研究生课程,实验将在更高水平的复杂程度上进行,并与现实世界的应用相关。%该项目致力于具有高度技术相关性的材料科学主题领域的前沿研究和教育问题。这项研究将在基础水平上为电子材料和先进的器件概念贡献基础材料科学知识。该计划的一个重要特点是强调教育,并通过在一个具有根本和技术意义的研究领域对学生进行培训,将研究与教育相结合。***
英文摘要
9733895 Browning The objective of this CAREER project is to develop a comprehensive research and education program linked to the next generation of semiconducting materials and devices. The project strives for an atomic level understanding of structure-property relationships in semiconducting materials, and a parallel materials science education program. The research will utilize recently developed correlated atomic resolution Z-contrast imaging and electron energy loss spectroscopy (EELS) techniques in a scanning transmission electron microscope (STEM) to probe internal interfaces and defects in semiconductors with the goal of determining atomic structure, composition and electronic structure at individual atomic sites. Electronic and optical properties of individual interfaces or defects will be modeled and the overall material properties constructed from fundamental atomic properties. Unlike traditional high-resolution imaging techniques, where images and simulations must be matched, this approach allows real materials defects and interfaces to be investigated. Research will include GaN and SiC, ITO/n-GaAs, ZnSe/Fe magnetic multilayers, and the effect of nitrogen on the oxidation of Si and SiGe for VLSI. The project involves established collaborations with university materials growth groups and with industry, incorporating feedback between growth and characterization related to advanced device concepts and developments. Atomic scale research studies of semiconductors are ideal for the integration of research and education. Links between the operation of an everyday object such as a CD-player or computer, and the atomic structure of its components, will be used to emphasize basic features of materials science, and the excitement of discovery. Similar project based learning ideas will also be incorporated into the undergraduate curriculum. The PI will be teaching a new course in experimental materials physics, where the focus will be on fundamental character ization and applications of materials. Running parallel to this will be a graduate course, where experiments will be carried out at higher levels of sophistication, and related to real world applications. %%% The project addresses leading edge research and education issues in a topical area of materials science having high technological relevance. The research will contribute basic materials science knowledge at a fundamental level to electronic materials and advanced device concepts. An important feature of the program is the emphasis on education, and on the integration of research and education through the training of students in a fundamentally and technologically significant research area. ***
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