SBIR Phase I: Enhanced P-Type Conductivity in GaN

这个小型企业创新研究一期项目旨在通过“带隙工程”掺杂概念的新变体来解决III-V型氮化物中的p型掺杂问题。结果表明，这种方法可以增强杂质的电活化，从而大大提高自由载流子浓度。初步计算预测p+材料是可能的，这对III-N激光技术具有重要意义。在过去几年中，对III-V氮化物材料的研究取得了实质性进展，包括展示了高效的绿色/蓝色发光二极管，以及在光谱的紫外线和蓝色部分发射的激光器。III-V型氮化物的热稳定性和在蓝宝石上生长的高位错材料的高辐射效率引起了人们的极大兴趣。然而，在这类新材料中仍有几个重要的问题有待解决，其中一个问题是“p型掺杂问题”，这是由于氮化镓和其他III-V型氮化物中受体的热活化能很大。p+掺杂在低电阻p触点上的商业应用是多方面的。这些包括所有111-N led，即：蓝色，绿色和黄色，III-N激光器以及用于微波应用的高频，高功率垂直jfet。

*** 9760579 Norris This Small Business Innovation Research Phase I project aims to solve the p-type doping problem in III-V nitrides by means of a novel variant on the concept of 'bandgap engineered' doping. It is shown that this approach can enhance the electrical activation of impurities and thus strongly increase the free carrier concentration.'Initial calculations predict p+ material is possible which is of great importance to III-N laser technology. Research in III-V nitride materials has resulted in substantial progress over the last few years including the demonstration of efficient green/blue light-emitting diodes, and lasers emitting in the ultraviolet and the blue part of the optical spectrum. The thermal stability of III-V nitrides and the high radiative efficiency of highly dislocated materials grown on sapphire has led to much interest in the field. However, several significant problems remain to be solved in this new class of materials, One of these issues, the "p-type doping problem' is due to the large thermal activation energy of acceptors in GaN and other III-V nitrides. The commercial applications of p+ doping for low resistance p-contacts are manifold. These include all 111-N LEDs that is: blue, green and yellow , III-N lasers as well as high frequency, high power vertical JFETs for microwave applications.