Novel Approaches to High-Performance Low-Noise InP Gunn Oscillators above 200 Ghz

9803781 Kamoua本提案的目的是设计、建造和测试InP古恩振荡器，用于在200 Ghz和300 Ghz之间的频率下产生二次谐波功率。 目标是为接收机系统提供强大、低噪声、紧凑和高效的本机振荡器。 我们的方法的成本优势将刺激毫米/亚毫米波区域的商业和军事应用的发展。 这项工作的动机是PI的最近的理论和实验结果表明，高性能（RF输出功率100 mW），可以从InP古恩振荡器在D波段（110-170 GHz）frequency.古恩器件结构的基本模式工作将被设计，制造和测试。 古恩器械的设计将使用研究者开发的Monte Carlo模拟器进行。 Hewlett-Packard高频结构模拟器（HFSS）将用于分析和设计谐振波导腔。 通过将蒙特卡罗和HFSS结果耦合到谐波平衡技术中，可以获得对RF输出功率水平的真实估计。 这些估计将大大加快优化过程。研究工作将作为纽约州立大学斯托尼布鲁克分校和密歇根大学的合作项目进行。 该设备和谐振电路的设计将由PI和一名研究生在斯托尼布鲁克进行。 安装和设备制造以及测量将在密歇根大学进行，由Dr. Wendele和一名研究生进行。在第一年，将开发使用梁式引线和/或微机械加工的新工艺技术，以简化封装步骤，并改善热管理、封装寄生和可靠性。 在第二年，将开发频率在200 GHz和260 GHz之间的振荡器，而在最后一年，将开发频率在260 GHz到300 GHz之间的振荡器。该项目的成功完成将提供紧凑可靠的定位振荡器，在上毫米波区域具有低噪声和高性能。 这将消除任何变容二极管乘法器级，或者至少大大减少本地振荡器系统中的变容二极管乘法器级的数量，从而简化低噪声接收器中这种系统的设计。

9803781KamouaThe objective of this proposal is to design, build, and test InP Gunn oscillators for second-harmonic power generation at frequencies between 200Ghz and 300 Ghz. The goal is to provide powerful, low-noise, compact, and efficient local oscillators for receiver systems. The cost advantage of our approach would stimulate the development of commercial and military applications in the millimeter/submillimeter-wave region. This effort is motivated by the PI's recent theoretical and experimental results demonstrating that high performance (RF output power 100 mW) can be obtained from InP Gunn oscillators operating in the fundamental mode at D-band (110-170 GHz) frequencies.Gunn device structures with a graded doping profile in the active region will be designed, fabricated, and tested. The design of the Gunn devices will be performed using a Monte Carlo simulator developed by the investigators. The Hewlett-Packard High-Frequency Structure Simulator (HFSS) will be used to analyze and design the resonant waveguide cavity. Realistic estimation of the RF output power levels will be obtained by coupling the Monte Carlo and the HFSS results in a harmonic-balance technique. These estimates will significantly expedite the optimization process.The research effort will be conducted as a collaboration of SUNY at Stony Brook and the University of Michigan. The design of the device and the resonant circuit will be carried out at Stony Brook by the PI and a graduate student. The mount and device fabrication as well as the measurements will be conducted at the University of Michigan by Dr. Eisele and a graduate student. During the first year, a new processing technologies using beam leads and/or micromaching will be developed to simplify the packaging step as well as improve heat management, package parasitic, and reliability. In the second year, oscillators will be developed for frequencies between 200 GHz and 260 GHz while in the final year oscillators will be developed for frequencies from 260 GHz to 300 GHz.Successful completion of the project will provide compact and reliable locate oscillators with low noise and high performance in the upper millimeter-wave region. This will either eliminate any varactor multiplier stage or at least greatly reduce their number in a local oscillator system, thus simplifying the design of such a system in low-noise receivers.