Studies of Semiconductor Clusters Using Frequency and Time-Resolved Photodetachment

9814677 Neumark该项目的目标是了解半导体团簇的振动和电子光谱如何随尺寸演变。 这将使用本实验室开发的各种负离子光剥离技术来完成。 提出了三个具体的实验类别：二元团簇阴离子，包括氮化硼，氮化铝和磷化铝，和氮化硅，将使用高分辨率光电子能谱和零电子动能谱研究;大分子光电子能谱（最多200个原子）磷化铟和磷化镓簇阴离子将进行，目的是将这些物质的电子结构与较大的半导体簇连接起来，“量子点”尺寸范围; 2一个时间分辨实验，阴离子飞秒光电子能谱，将用于提取尺寸选择的硅、锗和磷化铟簇阴离子的基态和激发电子态的振动频率。该项目对推进材料研究非常重要，因为它弥合了描述小分子团簇的物理和化学行为与为电子器件应用开发的器件材料的介观和宏观行为世界的差距。

9814677NeumarkThe goal of this project is to understand how the vibrational and electronic spectroscopy of semiconductor clusters evolves with size. This will be accomplished using a variety of negative ion photodetachment techniques developed in this laboratory. Three specific classes of experiments are proposed: Binary cluster anions, including boron nitride, alumninum nitride and phosphide, and silicon nitride, will be studied using high-resolution photoelectron spectroscopy and zero-electron kinetic energy spectroscopy; Photoelectron spectroscopy of large (up to 200 atoms) indium phosphide and gallium phosphide cluster anions will be carried out with the goal of connecting the electronic structure of these species with larger semiconductor clusters in the "quantum dot" size regime; A time- resolved experiment, anion femtosecond photoelectron spectroscopy, will be used to extract vibrational frequencies of ground and excited electronic states of size-selected silicon, germanium, and indium phosphide cluster anions.%%%This project is very important to advancing materials research in that it bridges the gap in describing the physical and chemical behavior of small molecular clusters with that of the world of mesoscale and macroscopic behavior of device materials being developed for the world of electronic device applications.***