SBIR Phase I: In-Situ, Real-Time Process Control for Micro-Electro-Mechanical System (MEMS) Applications
SBIR Phase I: In-Situ, Real-Time Process Control for Micro-Electro-Mechanical System (MEMS) Applications
批准号:
9860514
负责人:
Sylvie Charpenay
金额:
$9.99万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1999
资助国家:
美国
项目状态:
已结题
起止时间:
1999-01-01 至 1999-06-30
中文摘要
这个小型企业创新研究项目将开发一种用于微机电系统(MEMS)深蚀刻制造的现场实时过程控制工具。深蚀刻工艺用于制造高达几百微米厚的高纵横比结构,这是其他方法很难或不可能生产的。深蚀刻和其他MEMS技术有望以更低的成本提供具有更高性能和功能的新器件。在刻蚀过程中,刻蚀深度的控制是刻蚀技术的一大难点。目前的蚀刻深度测量后蚀刻使用非原位破坏性扫描电子显微镜。这是极其低效的,是在大规模生产之前需要克服的一个主要障碍。在线技术公司的初步测量表明,通过分析红外反射光谱来监测蚀刻深度是可能的。在第一阶段,将构建一个蚀刻深度传感器,结合傅立叶变换红外反射计和分析算法。传感器将集成到深度蚀刻工具上进行原位测试,并在蚀刻过程中实时收集和分析数据。使用拟议的计量方法的具体预期结果是:(1)通过减少破坏性测量和改进过程控制来降低成本;(2)通过更好的工艺控制提高MEMS结构的可重复性;(3)为流程开发提供有用的反馈,从而缩短开发时间。这些结果将对深蚀刻MEMS市场产生重大影响,因为它们将帮助未来的MEMS应用成熟,并通过更便宜的表征和改进的过程控制以更快的速度进入市场。
英文摘要
9860514 This Small Business Innovation Research Project will develop an in-situ, real-time process control tool for micro-electric-mechanical system (MEMS) deep-etch fabrication. Deep etch processes are used to manufacture high aspect ratio structures up to several hundred microns thick, which would be difficult or impossible to produce by other methods. Deep-etch and other MEMS technologies promiseto deliver new devices with increased performance and functionality at lower cost. A major difficulty in deep-etch technology is the control of the etch depth during the etching process. Currently etch depth is measured post-etch using ex-situ destructive scanning electron microscopy. This is extremely inefficient, and is a major hurdle to be surmounted before extensive production takes place. Preliminary measurements at On-Line Technologies have demonstrated that it is possible to monitor the etch depth through the analysis of the infrared reflectance spectrum. In Phase I, an etch depth sensor will be constructed incorporating a Fourier transform infrared based reflectometer and analysis algorithms. The sensor will be integrated onto a deep-etch tool for in-situ testing, and data will be collected and analyzed in real-time during the etch process. The specific anticipated results of the use of the proposed metrology are: (1) to reduce cost through the reduction of destructive measurements and the improvement in process control; (2) to increase the reproducibility of the MEMS structures through better process control; and (3) to provide useful feed-back for process development, thus reducing development time. These results will have a great impact on the deep-etch MEMS market, as they will help future MEMS applications to mature and come to market at a faster pace through cheaper characterization and improved process control.
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SBIR Phase II: In-Situ, Real-Time Process Control for Micro-Electro-Mechanical System (MEMS) Applications
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批准号:9983399
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项目类别:Standard Grant
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资助金额:$40.0万
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财政年份:2000
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负责人:Sylvie Charpenay
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依托单位:
国内基金
海外基金
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