US-India Cooperative Research: Fundamental Study of Ultrathin Gate Dielectrics for Nanoelectronics

该奖项支持美印合作研究：用于纳米电子学的超薄栅电介质的基础研究。克莱姆森大学的美国人Pi Rajendra Singh和印度理工学院(IIT)的印度合作者Samares Kar将对金属氧化物硅场效应晶体管(MOSFET)进行基础研究。他们的研究将集中在双栅介质材料上，这是超薄栅电介质面临的最重要的问题之一。这一结果有望加深我们对超薄栅电介质可靠性的了解，并有助于开发未来几代MOSFET和集成电路的技术。范围：这项研究与硅超大规模集成电路(VLSI)技术的持续进步高度相关。这将为纳米MOSFET超薄栅绝缘膜的制备提供先进的知识。此外，它还支持美国VLSI行业的目标，即在2010年前生产出具有纳米级器件特征的复杂电路。私人投资机构是期刊、会议和研讨会的积极贡献者，因此他们的工作成果应受到广泛关注。这一努力将加强美国和印度科学家之间的合作，并支持与印度一流理工学院的联系。

0002125Singh Description: This award supports US-India Cooperative Research: Fundamental Study of Ultrathin Gate Dielectrics for Nanoelectronics. US PI Rajendra Singh, Clemson University and Indian collaborator, Samares Kar, Indian Institute of Technology (IIT), Kanpur will conduct basic research on metal-oxide silicon field-effect transistors (MOSFETs). Their study will focus on two-gate dielectric materials, one of the most important issues facing ultrathin gate dielectrics. The results are expected to add to our understanding of the reliability of ultrathin gate dielectrics and to be useful in developing the technology for future generations of MOSFETs and integrated circuits.Scope: This research is highly relevant to the continued advancement of silicon Very Large Scale Integrated (VLSI) circuits technology. It should contribute advanced knowledge in the fabrication of ultrathin gate insulator films for nanoscale MOSFETs. Additionally, it supports the aim of the US VLSI industry, which is to produce complex circuits with nanoscale device features by 2010. The PIs are active contributors to journals, conferences and workshops, so the results of their work should receive broad attention. This effort will enhance collaboration between US and Indian scientists and support a linkage with one of India's premier institutes of technology.