High Performance Capacitors and Nonvolatile Memories based on Langmuir-Blodgett Films of Ferroelectric Polymers

这项工作的目的是展示和评估两个包含铁电聚合物Langmuir-Blodgett薄膜的器件概念：高性能电容器和非易失性数据存储元件。这两种器件概念都利用了聚偏氟乙烯及其共聚物的Langmuir-Blodgett膜的独特介电和铁电特性。高性能电容器得益于在厚度为1nm的高度均匀薄膜中超过3gv /m的创纪录介电强度。由铁电聚合物LB薄膜制成的多层电容器的储能密度有望达到每立方厘米200至1000焦耳。2微秒的快速开关速度和在各种衬底上沉积薄膜的能力允许制造廉价的混合非易失性数据存储设备，该设备由非电聚合物LB薄膜直接沉积在平面场效应晶体管阵列上组成。虽然每个器件概念可能单独证明适用于实际应用，但它们可能被证明与传统集成电路结合在一起特别有用，可用于生产非易失性随机存取存储器、缓存和档案存储。该项目是唯一报道的二维铁电体的五年研究和开发的自然衍生，该研究是由PI的小组与莫斯科晶体学研究所的两个小组合作进行的。

The purpose of this work is to demonstrate and evaluate two device concepts incorporatingferroelectric polymer Langmuir-Blodgett films: high-performance capacitors andnonvolatile data storage elements. Both device concepts take advantage of uniquedielectric and ferroelectric properties of Langmuir-Blodgett films of polyvinylidenefluoride and its copolymers. The high-performance capacitors benefit from the recorddielectric strength of over 3 GV/m in the highly uniform films as thin as 1 nm. The energystorage density of multilayer capacitors made from the ferroelectric polymer LB films isexpected to reach 200 to 1000 Joules per cubic centimeter. The fast switch speed of 2microseconds and the ability to deposit the films on a variety of substrates permits thefabrication of inexpensive of hybrid nonvolatile data storage devices composed of aferroelectric polymer LB film deposited directly on an array of planar field-effecttransistor. Though each device concept may independently prove suitable for practicalapplication, they may prove particularly useful together in combination with conventionalintegrated circuits for the production of nonvolatile random-access memories, caches, andarchival storage. This project is a natural spin-off of five years of study anddevelopment of the only reported two-dimensional ferroelectrics, research conductedjointly by the PI's group in collaboration with two groups at the Institute ofCrystallography in Moscow.