Ferroelectric Polymer Langmuir-Blodgett Films for Nonvolatile Random-Access Memory Applications

用于非易失性随机存取存储器应用的铁电聚合物 Langmuir-Blodgett 薄膜

• 批准号: 0600130
• 负责人: Stephen Ducharme
• 金额: $ 24万
• 依托单位: University of Nebraska-Lincoln
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-04-15 至 2010-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0600130&HistoricalAwards=false
• 关键词: Ferroelectric; Polymer; Langmuir; Blodgett; Films

The objective of this research is to develop integrated nonvolatile memory devices based on ultrathin ferroelectric polymer Langmuir-Blodgett films for potential use in nonvolatile random-access memories. The approach is to integrate the ferrolectric films with silicon field-effect transistors and conduct experimental and theoretical studies of polarization dynamics critical to device performance and reliability.The intellectual merit of the project is the application of our specialized methods for production and characterization of two-dimensional ferroelectric polymer films to improve key properties affecting the performance of ferroelectric memories, such as spontaneous polarization, switching speed, data retention, fatigue, compatibility with integrated silicon electronics, and manufacturability. The broader impact includes the potential for widespread application of inexpensive high-performance nonvolatile memories to portable communications and computing devices, such as, cell phones, personal digital assistants, MP3 players, and smart cards. The scientific findings will advance the understanding of polarization dynamics in ferroelectric polymers. Broader ImpactThe project will enhance the university's research, education, and outreach missions through contributions to the activities of the Center for Materials Research and Analysis and extensive interdisciplinary materials research programs, through training of undergraduate and graduate students - including students from underrepresented groups - in the inherently interdisciplinary cooperative research activities, and through numerous outreach activities the PI's group actively contributes to, such as MRSEC summer teacher fellowships, Saturday Science (elementary school science participation), Project Fulcrum (middle school science interns), the Cosmic-Ray Observatory Project (high school research).

本研究的目的是开发基于超薄铁电聚合物Langmuir-Blodgett薄膜的集成非易失性存储器件，以用于非易失性随机存取存储器。该方法是将铁电薄膜与硅场效应晶体管集成，并对对器件性能和可靠性至关重要的极化动力学进行实验和理论研究。该项目的智能优点是应用我们的专门方法生产和表征二维铁电聚合物薄膜，以改善影响铁电存储器性能的关键性能，如自发极化、开关速度、数据保持、疲劳、与集成硅电子的兼容性和可制造性。更广泛的影响包括将廉价的高性能非易失性存储器广泛应用于便携式通信和计算设备的潜力，例如手机、个人数字助理、MP3播放器和智能卡。这些科学发现将促进对铁电聚合物极化动力学的理解。该项目将通过为材料研究和分析中心的活动和广泛的跨学科材料研究计划做出贡献，通过在固有的跨学科合作研究活动中培训本科生和研究生--包括来自代表性不足的群体的学生--以及通过许多外联活动，如MRSEC暑期教师奖学金、星期六科学(小学科学参与)、支点项目(中学科学实习生)、宇宙射线观测项目(高中研究)，来加强大学的研究、教育和外联任务。