Ferroelectric Polymer Langmuir-Blodgett Films for Nonvolatile Random-Access Memory Applications

用于非易失性随机存取存储器应用的铁电聚合物 Langmuir-Blodgett 薄膜

• 批准号: 0600130
• 负责人: Stephen Ducharme
• 金额: $ 24万
• 依托单位: University of Nebraska-Lincoln
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2006
• 资助国家: 美国
• 起止时间: 2006-04-15 至 2010-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=0600130&HistoricalAwards=false
• 关键词: Ferroelectric; Polymer; Langmuir; Blodgett; Films

The objective of this research is to develop integrated nonvolatile memory devices based on ultrathin ferroelectric polymer Langmuir-Blodgett films for potential use in nonvolatile random-access memories. The approach is to integrate the ferrolectric films with silicon field-effect transistors and conduct experimental and theoretical studies of polarization dynamics critical to device performance and reliability.The intellectual merit of the project is the application of our specialized methods for production and characterization of two-dimensional ferroelectric polymer films to improve key properties affecting the performance of ferroelectric memories, such as spontaneous polarization, switching speed, data retention, fatigue, compatibility with integrated silicon electronics, and manufacturability. The broader impact includes the potential for widespread application of inexpensive high-performance nonvolatile memories to portable communications and computing devices, such as, cell phones, personal digital assistants, MP3 players, and smart cards. The scientific findings will advance the understanding of polarization dynamics in ferroelectric polymers. Broader ImpactThe project will enhance the university's research, education, and outreach missions through contributions to the activities of the Center for Materials Research and Analysis and extensive interdisciplinary materials research programs, through training of undergraduate and graduate students - including students from underrepresented groups - in the inherently interdisciplinary cooperative research activities, and through numerous outreach activities the PI's group actively contributes to, such as MRSEC summer teacher fellowships, Saturday Science (elementary school science participation), Project Fulcrum (middle school science interns), the Cosmic-Ray Observatory Project (high school research).

本研究的目的是开发基于超薄铁电聚合物 Langmuir-Blodgett 薄膜的集成非易失性存储器件，以用于非易失性随机存取存储器。该方法是将铁电薄膜与硅场效应晶体管集成，并对对器件性能和可靠性至关重要的极化动力学进行实验和理论研究。该项目的智力优势是应用我们专门的方法生产和表征二维铁电聚合物薄膜，以改善影响铁电存储器性能的关键特性，例如自发极化、切换速度、数据 保持力、疲劳、与集成硅电子器件的兼容性以及可制造性。更广泛的影响包括廉价的高性能非易失性存储器在便携式通信和计算设备（例如手机、个人数字助理、MP3 播放器和智能卡）中广泛应用的潜力。这些科学发现将增进对铁电聚合物极化动力学的理解。更广泛的影响该项目将通过对材料研究与分析中心的活动和广泛的跨学科材料研究项目做出贡献，通过在本质上的跨学科合作研究活动中对本科生和研究生（包括来自代表性不足群体的学生）进行培训，以及通过 PI 小组积极贡献的众多外展活动，如 MRSEC 夏季教师奖学金、周六科学（小学 学校科学参与）、支点项目（中学科学实习生）、宇宙射线天文台项目（高中研究）。