SGER: Nonlithographic Nanoelectronic Device Integration for RF Circuit Design

Das0115139随着传统集成电路技术达到物理和经济极限，纳米技术越来越被视为补充下一代电子设备的一种使能技术。这个项目的目的是确定与集成nonlithographic纳米结构制造技术和RF集成电路的障碍问题。这将通过电化学纳米结构制造技术对使用标准CMOS和SiGe技术制造的RF收发器电路的性能的影响的实验研究来实现。这项调查的结果将有助于确定的技术问题，必须解决的nonlithographic nanostrures内的RF电路设计的集成。

Das0115139As traditional integrated circuit technology reaches both physical and economic limits, nanotechnology is increasingly being viewed as an enabling technology to complement the next generation of electronic devices. The objective of this project is to identify barrier issues associated with the integration of nonlithographic nanostructure fabrication technologies and RF integrated circuits. This will be accomplished through an experimental investigation of the effects of an electrochemical nanostructure fabrication technique on the performance of an RF transceiver circuit fabricated using standard CMOS and SiGe technology. The results of this investigation will help identify technological issues which must be addressed for the integration of nonlithographic nanostructrues within RF circuit designs.